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IS61LV12816-10KI

128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS61LV12816-10KI

128K x 16 HIGH-SPEED CMOS STATIC RAM

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswi

ICSI

Integrated Circuit Solution Inc

IS61LV12816-10KI

128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS61LV12816-10LQ

128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS61LV12816-10LQ

128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS61LV12816-10LQI

128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS61LV12816-10LQI

128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS61LV12816-10T

128Kx16HIGH-SPEEDCMOSSTATICRAM

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswi

ICSI

Integrated Circuit Solution Inc

IS61LV12816-10T

128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS61LV12816-10T

128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS61LV12816-10TI

128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

IS61LV12816-10TI

128Kx16HIGH-SPEEDCMOSSTATICRAM

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswi

ICSI

Integrated Circuit Solution Inc

IS61LV12816-10TI

128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

北京矽成北京矽成半導體有限公司

詳細參數(shù)

  • 型號:

    IS61LV12816-10KI

  • 制造商:

    ISSI

  • 制造商全稱:

    Integrated Silicon Solution, Inc

  • 功能描述:

    128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

供應商型號品牌批號封裝庫存備注價格
ICSI
23+
NA
19960
只做進口原裝,終端工廠免費送樣
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ISSI
22+
BGA
5000
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1923+
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8200
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ISSI
341
原裝正品長期供貨,如假包賠包換 徐小姐13714450367
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23+
65480
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ISSI
21+
35200
一級代理/放心采購
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ISSI
23+
589610
新到現(xiàn)貨 原廠一手貨源 價格秒殺代理!
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ISSI
0224/0226
SOP44
2500
全新原裝現(xiàn)貨100真實自己公司
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ISSI
TSOP44
356
全新原裝進口自己庫存優(yōu)勢
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ISSI
2022
TSOP-44
2550
原廠原裝正品,價格超越代理
詢價
更多IS61LV12816-10KI供應商 更新時間2024-11-19 13:33:00