首頁 >IRLZ34>規(guī)格書列表

零件編號下載 訂購功能描述/絲印制造商 上傳企業(yè)LOGO

IRLZ34L

HEXFET Power MOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRF

International Rectifier

IRLZ34L

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswichtingspeedandruggedizeddevicedesignthatPowerMOSFETsareknownfor,providesthedesignerwitha

VishayVishay Siliconix

威世科技威世科技半導體

IRLZ34LPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswichtingspeedandruggedizeddevicedesignthatPowerMOSFETsareknownfor,providesthedesignerwitha

VishayVishay Siliconix

威世科技威世科技半導體

IRLZ34N

N-channel enhancement mode Logic level TrenchMOS transistor

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintendedforuseinswitchedmodepower

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

IRLZ34N

HEXFET Power MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRLZ34N

N-Channel MOSFET Transistor

?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤35m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRLZ34NL

HEXFET Power MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRLZ34NLPBF

HEXFET Power MOSFET ( VDSS = 55V , RDS(on) = 0.035廓 , ID = 30A )

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRLZ34NPBF

HEXFET Power MOSFET

IRF

International Rectifier

IRLZ34NS

HEXFET Power MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IRLZ34

  • 功能描述：

    MOSFET N-Chan 60V 30 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IR
23+
TO-220
35890
詢價
IR
24+
TO-220
40
詢價
IR
2015+
TO-220AB
12500
全新原裝,現(xiàn)貨庫存長期供應
 詢價
INTERNATIONA
05+
原廠原裝
4345
只做全新原裝真實現(xiàn)貨供應
 詢價
IR
2016+
TO-220定
6528
房間原裝進口現(xiàn)貨假一賠十
 詢價
IR
24+
TO-220
1068
原裝現(xiàn)貨假一罰十
 詢價
IR
23+
TO-220
8890
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
 詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR
25+23+
New
33088
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨
 詢價
IR
20+
TO-220
36900
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
更多IRLZ34供應商 更新時間2025-3-27 17:12:00

相關規(guī)格書

更多

相關庫存

更多