零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRLZ44 | N-CHANNEL LOGIC LEVEL MOSFET N-CHANNELLOGICLEVELMOSFET | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | |
IRLZ44 | Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=50*A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?DynamicdV/dtRating ?Logic-LevelGateDrive ?RDS(on)SpecifiedatVGS=4V&5V ?17 | IRF International Rectifier | IRF | |
IRLZ44 | Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipatio | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
IRLZ44 | Power MOSFET FEATURES ?DynamicdV/dtrating ?Logic-levelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
IRLZ44 | Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
IRLZ44 | Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
IRLZ44 | N-CHANNEL LOGIC LEVEL MOSFET | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. | ARTSCHIP | |
IRLZ44 | Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
Power MOSFET FEATURES ?DynamicdV/dtrating ?Logic-levelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Power MOSFET(Vdss=55V, Rds(on)=0.022ohm, Id=47A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
Power MOSFET(Vdss=55V, Rds(on)=0.022ohm, Id=47A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
HEXFET Power MOSFET HEXFET?PowerMOSFET | IRF International Rectifier | IRF | ||
Power MOSFET(Vdss=55V, Rds(on)=0.022ohm, Id=47A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
HEXFET? Power MOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipatio | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=50*A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?SurfaceMount ?AvailableinTape&Reel ?DynamicdV/dtRating ?Logic-LevelGateDriv | IRF International Rectifier | IRF | ||
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprov | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Power MOSFET FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?Logic-levelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?175°Coperatingtemperature ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Power MOSFET FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?Logic-levelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?175°Coperatingtemperature ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprov | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
詳細參數(shù)
- 型號:
IRLZ44
- 功能描述:
MOSFET N-Chan 60V 50 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
SAM |
05+ |
原廠原裝 |
6004 |
只做全新原裝真實現(xiàn)貨供應(yīng) |
詢價 | ||
IR |
23+ |
TO220 |
35890 |
詢價 | |||
IR |
24+ |
TO-220 |
57 |
詢價 | |||
IR |
2015+ |
TO-220AB |
12500 |
全新原裝,現(xiàn)貨庫存長期供應(yīng) |
詢價 | ||
IR |
23+ |
TO-220AB |
8600 |
全新原裝現(xiàn)貨 |
詢價 | ||
IR |
16+ |
原廠封裝 |
1000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IRF |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
IR |
新 |
50 |
全新原裝 貨期兩周 |
詢價 | |||
IR |
23+ |
TRANS |
65480 |
詢價 | |||
IR |
20+ |
TO-220 |
36900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 |
相關(guān)規(guī)格書
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