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IRLZ24

HEXFET POWER MOSFET

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

IRF

International Rectifier

IRLZ24

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidesthedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,?lowon-resistanceandcosteffectiveness.TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissip

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLZ24

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Logic-levelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLZ24

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLZ24

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLZ24_V01

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Logic-levelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLZ24L

Power MOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?Dynamicdv/dtrating ?Logic-levelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?175°Coperatingtemperature ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLZ24N

HEXFET POWER MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRLZ24NL

HEXFET Power MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRLZ24NLPBF

HEXFET Power MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRLZ24NS

HEXFET Power MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRLZ24NSPBF

HEXFET Power MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRLZ24PBF

HEXFET Power MOSFET

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

IRF

International Rectifier

IRLZ24PBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidesthedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,?lowon-resistanceandcosteffectiveness.TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissip

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLZ24S

Power MOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?Dynamicdv/dtrating ?Logic-levelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?175°Coperatingtemperature ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLZ24S_V02

Power MOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?Dynamicdv/dtrating ?Logic-levelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?175°Coperatingtemperature ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLZ24_11

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLZ24A

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRLZ24L

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLZ24L

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào):

    IRLZ24

  • 功能描述:

    MOSFET N-Chan 60V 17 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
24+
TO-220AB
8866
詢價(jià)
IR
23+
TO-220
35890
詢價(jià)
IR
2015+
TO-220AB
12500
全新原裝,現(xiàn)貨庫(kù)存長(zhǎng)期供應(yīng)
詢價(jià)
INTERNATIONA
06+
原廠原裝
4386
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
詢價(jià)
IR
9610
10
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
詢價(jià)
IR
23+
TO-220AB
8600
全新原裝現(xiàn)貨
詢價(jià)
ir
24+
N/A
6980
原裝現(xiàn)貨,可開13%稅票
詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
VishayPCS
5
全新原裝 貨期兩周
詢價(jià)
ST
23+
65480
詢價(jià)
更多IRLZ24供應(yīng)商 更新時(shí)間2024-12-30 16:30:00