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IRLU3105PBF中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書

IRLU3105PBF
廠商型號(hào)

IRLU3105PBF

功能描述

Logic-Level Gate Drive

文件大小

327.71 Kbytes

頁面數(shù)量

11

生產(chǎn)廠商 International Rectifier
企業(yè)簡稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2024-12-22 16:42:00

IRLU3105PBF規(guī)格書詳情

Description

This HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRLU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

Features

● Logic-Level Gate Drive

● Advanced Process Technology

● Ultra Low On-Resistance

● 175°C Operating Temperature

● Fast Switching

● Repetitive Avalanche Allowed up to Tjmax

● Lead-Free

產(chǎn)品屬性

  • 型號(hào):

    IRLU3105PBF

  • 制造商:

    International Rectifier

  • 功能描述:

    MOSFET, 55V, 25A, 37 MOHM, 13.3 NC QG, LOGIC LEVEL, I-PAK

  • 功能描述:

    TRANS MOSFET N-CH 55V 25A 3PIN IPAK - Rail/Tube

  • 功能描述:

    MOSFET N 55V 25A I-PAK

  • 功能描述:

    MOSFET, N, 55V, 25A, I-PAK

  • 功能描述:

    MOSFET, N, 55V, 25A, I-PAK; Transistor

  • Polarity:

    N Channel; Continuous Drain Current

  • Id:

    25A; Drain Source Voltage

  • Vds:

    55V; On Resistance

  • Rds(on):

    37mohm; Rds(on) Test Voltage

  • Vgs:

    10V; Threshold Voltage Vgs

  • Typ:

    3V; Power Dissipation ;RoHS

  • Compliant:

    Yes

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