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IRLU2705PBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRLU2705PBF規(guī)格書詳情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
? Logic-Level Gate Drive
? Ultra Low On-Resistance
? Surface Mount (IRLR2705)
? Straight Lead (IRLU2705)
? Advanced Process Technology
? Fast Switching
? Fully Avalanche Rated
? Lead-Free
產(chǎn)品屬性
- 型號：
IRLU2705PBF
- 功能描述：
MOSFET MOSFT 55V 24A 40mOhm 16.7nC LogLvl
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
NA/ |
500 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
I |
2020+ |
TO-251 |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價 | ||
IR |
2016+ |
TO-251 |
6528 |
房間原裝進(jìn)口現(xiàn)貨假一賠十 |
詢價 | ||
VBSEMI/臺灣微碧 |
22+ |
TO-251 |
50000 |
只做原裝假一罰十,歡迎咨詢 |
詢價 | ||
IR |
21+ |
TO-251 |
10 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
IR |
24+ |
TO-251 |
500 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
IR |
24+ |
TO-251 |
141 |
詢價 | |||
IR |
2022+ |
TO-251 |
30000 |
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十 |
詢價 | ||
VB |
23+ |
TO-251 |
7000 |
詢價 | |||
VB |
TO-251 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價 |
