IRL630PBF中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書
廠商型號 |
IRL630PBF |
功能描述 | Power MOSFET |
文件大小 |
1.92247 Mbytes |
頁面數(shù)量 |
8 頁 |
生產(chǎn)廠商 | Vishay Siliconix |
企業(yè)簡稱 |
Vishay【威世科技】 |
中文名稱 | 威世科技半導(dǎo)體官網(wǎng) |
原廠標(biāo)識 | |
數(shù)據(jù)手冊 | |
更新時間 | 2024-11-16 17:45:00 |
IRL630PBF規(guī)格書詳情
VDS (V) 200 V
RDS(on) (Ω) VGS = 5 V 0.40
Qg (Max.) (nC) 40
Qgs (nC) 5.5
Qgd (nC) 24
Configuration Single
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
FEATURES
? Dynamic dV/dt Rating
? Repetitive Avalanche Rated
? Logic Level Gate Drive
? RDS(on) Specified at VGS = 4 V and 5 V
? 150 °C Operating Temperature
? Fast Switching
? Ease of Paralleling
? Lead (Pb)-free Available
產(chǎn)品屬性
- 型號:
IRL630PBF
- 功能描述:
MOSFET N-Chan 200V 9.0 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Vishay Siliconix |
24+ |
TO-220AB |
30000 |
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品 |
詢價 | ||
VISHAY |
21+ |
TO-220 |
4000 |
全新原裝 |
詢價 | ||
VISHAY/威世 |
22+ |
TO-220 |
50000 |
只做原裝正品,假一罰十,歡迎咨詢 |
詢價 | ||
SILICONIXVISHAY |
23+ |
NA |
25630 |
原裝正品 |
詢價 | ||
VISHAY |
20+ |
TO-220 |
30 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
SILICONIXVISHAY |
21+ |
NA |
12820 |
只做原裝,質(zhì)量保證 |
詢價 | ||
VISHAY/威世 |
24+ |
2681 |
只做原廠渠道 可追溯貨源 |
詢價 | |||
VISHAY |
24+ |
TO-220 |
5000 |
十年沉淀唯有原裝 |
詢價 | ||
VISHAY(威世) |
23+ |
TO-220 |
8498 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價 | ||
IR |
1816+ |
TO-220 |
6523 |
科恒偉業(yè)!只做原裝正品,假一賠十! |
詢價 |