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IRL630PBF中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書

IRL630PBF
廠商型號

IRL630PBF

功能描述

Power MOSFET

文件大小

1.92247 Mbytes

頁面數(shù)量

8

生產(chǎn)廠商 Vishay Siliconix
企業(yè)簡稱

Vishay威世科技

中文名稱

威世科技半導(dǎo)體官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二原廠數(shù)據(jù)手冊到原廠下載

更新時間

2024-11-16 17:45:00

IRL630PBF規(guī)格書詳情

VDS (V) 200 V

RDS(on) (Ω) VGS = 5 V 0.40

Qg (Max.) (nC) 40

Qgs (nC) 5.5

Qgd (nC) 24

Configuration Single

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

FEATURES

? Dynamic dV/dt Rating

? Repetitive Avalanche Rated

? Logic Level Gate Drive

? RDS(on) Specified at VGS = 4 V and 5 V

? 150 °C Operating Temperature

? Fast Switching

? Ease of Paralleling

? Lead (Pb)-free Available

產(chǎn)品屬性

  • 型號:

    IRL630PBF

  • 功能描述:

    MOSFET N-Chan 200V 9.0 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
Vishay Siliconix
24+
TO-220AB
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
詢價
VISHAY
21+
TO-220
4000
全新原裝
詢價
VISHAY/威世
22+
TO-220
50000
只做原裝正品,假一罰十,歡迎咨詢
詢價
SILICONIXVISHAY
23+
NA
25630
原裝正品
詢價
VISHAY
20+
TO-220
30
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
SILICONIXVISHAY
21+
NA
12820
只做原裝,質(zhì)量保證
詢價
VISHAY/威世
24+
2681
只做原廠渠道 可追溯貨源
詢價
VISHAY
24+
TO-220
5000
十年沉淀唯有原裝
詢價
VISHAY(威世)
23+
TO-220
8498
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
詢價
IR
1816+
TO-220
6523
科恒偉業(yè)!只做原裝正品,假一賠十!
詢價