IRL630中文資料IRF數(shù)據手冊PDF規(guī)格書
IRL630規(guī)格書詳情
VDSS = 200V
RDS(on) = 0.40?
ID = 9.0A
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
● Dynamic dv/dt Rating
● Repetitive Avalanche Rated
● Logic-Level Gate Drive
● RDS(ON) Specified at VGS = 4V & 5V
● 150°C Operating Temperature
● Fast Switching
● Ease of paralleling
產品屬性
- 型號：
IRL630
- 功能描述：
MOSFET N-Chan 200V 9.0 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
21+ |
TO-263 |
30490 |
原裝現(xiàn)貨庫存 |
詢價 | ||
IR |
22+23+ |
TO-263 |
15848 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
IR |
22+ |
D2-PAK |
8000 |
原裝正品支持實單 |
詢價 | ||
SEC |
589220 |
16余年資質 絕對原盒原盤 更多數(shù)量 |
詢價 | ||||
SILICONIXVISHAY |
21+ |
NA |
12820 |
只做原裝,質量保證 |
詢價 | ||
IR |
24+ |
TO-220 |
44 |
詢價 | |||
Vishay |
TO-263 |
268 |
正品原裝--自家現(xiàn)貨-實單可談 |
詢價 | |||
IR |
22+ |
TO220 |
34430 |
鄭重承諾只做原裝進口現(xiàn)貨 |
詢價 | ||
FSC |
17+ |
TO-220 |
6200 |
詢價 | |||
SIX |
1535+ |
332 |
詢價 |
