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IRL2910

HEXFET Power MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRL2910

N-Channel MOSFET Transistor

?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.026? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRL2910L

HEXFET POWER MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRL2910PBF

HEXFET POWER MOSFET ( VDSS = 100V , RDS(on) = 0.026廓 , ID = 55A )

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRL2910S

HEXFET POWER MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRL2910S

Marking：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRL2910SPBF

HEXFET? Power MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRL2910L

Isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRL2910PBF

ADVANCED PROCESS TECHNOLOGY

IRF

International Rectifier

IRL2910PBF

N-Channel 100-V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

詳細參數(shù)

  • 型號：

    IRL2910

  • 制造商：

    International Rectifier

  • 功能描述：

    MOSFET N LOGIC TO-220

供應商型號品牌批號封裝庫存備注價格
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網
 詢價
IR
23+
TO-220
35890
詢價
IR
24+
TO-220AB
8866
詢價
9000
原裝現(xiàn)貨價格有優(yōu)勢量多可發(fā)貨
 詢價
ir
06+
TO-220
15000
原裝
 詢價
IR
23+
TO-220AB
8600
全新原裝現(xiàn)貨
 詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR
23+
TO-220
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
IR
21+
TO-220
12588
原裝正品,自己庫存 假一罰十
 詢價
IR
20+
TO-220
36900
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
更多IRL2910供應商 更新時間2025-6-12 13:00:00

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