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IRG4PH40U

INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A)

Features ?UltraFast:Optimizedforhighoperating frequenciesupto40kHzinhardswitching, >200kHzinresonantmode ?NewIGBTdesignprovidestighter parameterdistributionandhigherefficiencythan previousgenerations ?Optimizedforpowerconversion;SMPS,UPS and

IRF

International Rectifier

IRG4PH40UD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A)

Features ?UltraFast:Optimizedforhighoperating frequenciesupto40kHzinhardswitching, >200kHzinresonantmode ?NewIGBTdesignprovidestighter parameterdistributionandhigherefficiencythan previousgenerations ?IGBTco-packagedwithHEXFREDTMultrafast, ult

IRF

International Rectifier

IRG4PH40UD2

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features ?UltraFast:Optimizedformediumoperating frequenciesupto40kHzinhardswitching, >200kHzinresonantmode ?NewIGBTdesignprovidestighter parameterdistributionandhigherefficiencythan previousgenerations ?IGBTco-packagedwithHEXFRED?ultrafast, u

IRF

International Rectifier

IRG4PH40UD2-E

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features ?UltraFast:Optimizedforhighoperating frequenciesupto200kHzinresonantmode ?IGBTco-packagedwithHEXFRED?ultrafast, ultra-soft-recoveryanti-paralleldiodesforusein resonantcircuit ?IndustrystandardTO-247ADpackagewith extendedleads Benefits ?Hi

IRF

International Rectifier

IRG4PH40UD2-EP

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features ?UltraFastIGBTOptimizedforhighoperating frequenciesupto200kHzinresonantmode ?IGBTco-packagedwithHEXFREDTMultrafast, ultra-soft-recoveryanti-paralleldiodesforusein bridgeconfigurations ?IndustrystandardTO-247ACpackagewithextendedleads ?Lead-F

IRF

International Rectifier

IRG4PH40UD2-EP

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features ?UltraFastIGBTOptimizedforhighoperating frequenciesupto200kHzinresonantmode ?IGBTco-packagedwithHEXFREDTMultrafast, ultra-soft-recoveryanti-paralleldiodesforusein bridgeconfigurations ?IndustrystandardTO-247ACpackagewithextendedleads ?Lead-F

IRF

International Rectifier

IRG4PH40UD2-EPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features ?UltraFastIGBTOptimizedforhighoperating frequenciesupto200kHzinresonantmode ?IGBTco-packagedwithHEXFREDTMultrafast, ultra-soft-recoveryanti-paralleldiodesforusein bridgeconfigurations ?IndustrystandardTO-247ACpackagewithextendedleads ?Lead-F

IRF

International Rectifier

IRG4PH40UD2PBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features ?UltraFast:Optimizedforhighoperating frequenciesupto40kHzinhardswitching, >200kHzinresonantmode ?NewIGBTdesignprovidestighter parameterdistributionandhigherefficiencythan previousgenerations ?IGBTco-packagedwithHEXFREDTMultrafast, ult

IRF

International Rectifier

IRG4PH40UDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIDDE

Features ?UltraFast:Optimizedforhighoperating frequenciesupto40kHzinhardswitching, >200kHzinresonantmode ?NewIGBTdesignprovidestighter parameterdistributionandhigherefficiencythan previousgenerations ?IGBTco-packagedwithHEXFREDTMultrafast, ult

IRF

International Rectifier

IRG4PH40UPBF

Ultra Fast Speed IGBT

Features ?UltraFast:Optimizedforhighoperating frequenciesupto40kHzinhardswitching, >200kHzinresonantmode ?NewIGBTdesignprovidestighter parameterdistributionandhigherefficiencythan previousgenerations ?Optimizedforpowerconversion;SMPS,UPS and

IRF

International Rectifier

IRG4PH40UD

Fit Rate / Equivalent Device Hours

IRF

International Rectifier

IRG4PH40UD2-EPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRF

International Rectifier

IRG4PH40UD2-EPBF_15

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRF

International Rectifier

IRG4PH40UDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRF

International Rectifier

IRG4PH40UDPBF_15

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRF

International Rectifier

IRG4PH40UPBF

INSULATED GATE BIPOLAR TRANSISTOR

IRF

International Rectifier

IRG4PH40UPBF_15

INSULATED GATE BIPOLAR TRANSISTOR

IRF

International Rectifier

IRG4PH40UD-EPBF

包裝:卷帶(TR) 封裝/外殼:TO-247-3 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 1200V 41A 160W TO247-3

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRG4PH40UDPBF

包裝:卷帶(TR) 封裝/外殼:TO-247-3 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 1200V 41A 160W TO247AC

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRG4PH40UPBF

包裝:卷帶(TR) 封裝/外殼:TO-247-3 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 1200V 41A 160W TO247AC

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號:

    IRG4PH40U

  • 制造商:

    International Rectifier

  • 功能描述:

    IGBT TO-247

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
19+
TO-247
27762
詢價
IR
14+
TO-247
1165
絕對真實庫存 百分百原裝正品
詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
詢價
IR
23+
TO-3P
9896
詢價
IR
16+
原廠封裝
250
原裝現(xiàn)貨假一罰十
詢價
IR
23+
TO-247
6000
全新原裝
詢價
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價
IR
19+
TO-247
75137
原廠代理渠道,每一顆芯片都可追溯原廠;
詢價
IR
24+
TO-247
6430
原裝現(xiàn)貨/歡迎來電咨詢
詢價
IR
23+
TO-3P
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
更多IRG4PH40U供應(yīng)商 更新時間2024-11-17 10:20:00