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IRFU9024

Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-8.8A)

Description ThirdGenerationHEXFETsMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?SurfaceMount(IRFR9024) ?St

IRF

International Rectifier

IRFU9024

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFU9024

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU9024

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU9024

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU9024

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR9024,SiHFR9024) ?Straightlead(IRFU9024,SiHFU9024) ?Availableintapeandreel ?P-channel ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFU9024

isc P-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=-8.8A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.28Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFU9024

isc P-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFU9024

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFU9024

Power MOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

詳細(xì)參數(shù)

  • 型號：

    IRFU9024

  • 功能描述：

    MOSFET P-Chan 60V 8.8 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
VISHAY
23+
I-PAK(TO-251)
8600
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
 詢價(jià)
VISHAY/威世
20+原裝正品
I-PAK(TO-251)
6000
大量現(xiàn)貨,免費(fèi)發(fā)樣。
 詢價(jià)
IR
2020+
TO251
8500
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價(jià)
VISHAY
1234
I-PAK (TO-251)
22
原裝庫存有訂單來談優(yōu)勢
 詢價(jià)
VISHAY
2021+
I-PAK(TO-251)
6800
原廠原裝,歡迎咨詢
 詢價(jià)
VISHAY
23+
I-PAK (TO-251)
6850
只做原廠原裝正品現(xiàn)貨!假一賠十!
 詢價(jià)
IR
23+
TO-251
7500
絕對全新原裝!優(yōu)勢供貨渠道!特價(jià)!請放心訂購!
 詢價(jià)
IR
23+
TO-251
35890
詢價(jià)
IR
2015+
SOP/DIP
19889
一級代理原裝現(xiàn)貨,特價(jià)熱賣!
 詢價(jià)
FSA
24+
TO-251
74913
詢價(jià)
更多IRFU9024供應(yīng)商 更新時(shí)間2025-3-10 15:12:00

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