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IRFU420

Dynamic dV/dt Rating

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU420

Marking:IPAK;Package:TO-251;isc N-Channel MOSFET Transistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ?DrainCurrent–ID=2.4A@TC=25℃ ?DrainSourceVoltage-:VDSS=500V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=3.0Ω(Max) ?100avalanchetested ?MinimumLot-to-Lotvariation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFU420

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR420,SiHFR420) ?Straightlead(IRFU420,SiHFU420) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFU420

Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.4A)

Description ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes

IRF

International Rectifier

IRFU420

2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs

2.5A,500V,3.000Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.Allofthesepow

Intersil

Intersil Corporation

IRFU420

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFU420

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU420

Dynamic dV/dt Rating

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU420A

Power MOSFET

FEATURES ?LowgateChargeQgresultsinsimpledrive requirement ?Improvedgate,avalancheanddynamicdV/dt ruggedness ?Fullycharacterizedcapacitanceand avalanchevoltageandcurrent ?EffectiveCossspecified ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFU420A

SMPS MOSFET

HEXFET?PowerMOSFET Applications ?SwitchModePowerSupply(SMPS) ?UninterruptiblePowerSupply ?Highspeedpowerswitching Benefits ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,Avalancheanddynamicdv/dtRuggedness ?FullyCharacterize

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào):

    IRFU420

  • 功能描述:

    MOSFET N-Chan 500V 2.4 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
INTERLS
24+
TO-251
1500
只做原廠渠道 可追溯貨源
詢價(jià)
IR
22+
TO-251
7500
只做原裝正品假一賠十!正規(guī)渠道訂貨!
詢價(jià)
IR
23+
TO-251
3400
原廠原裝正品
詢價(jià)
IR
06+
TO-251
12000
原裝
詢價(jià)
IR
23+
TO-251
35890
詢價(jià)
VIS
23+
TO-251
10000
原裝正品,假一罰十
詢價(jià)
IR
24+
原廠封裝
154
原裝現(xiàn)貨假一罰十
詢價(jià)
VISHAY
23+
TO262
7750
全新原裝優(yōu)勢(shì)
詢價(jià)
IR
16+
NA
8800
原裝現(xiàn)貨,貨真價(jià)優(yōu)
詢價(jià)
IR
2020+
TO-251
6000
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可
詢價(jià)
更多IRFU420供應(yīng)商 更新時(shí)間2025-4-12 11:04:00