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零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IRFU410	文件：55.68 Kbytes Page：7 Pages	1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas	Intersil Intersil Corporation	Intersil
IRFU4104	文件：182.26 Kbytes Page：11 Pages	Power MOSFET(Vdss=40V, Rds(on)=5.5mohm, Id=42A) AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitc	IRF International Rectifier	IRF
IRFU4104	文件：4.17531 Mbytes Page：11 Pages	AUTOMOTIVE MOSFET AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU4104	文件：4.166479 Mbytes Page：11 Pages	AUTOMOTIVE MOSFET AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU4104PBF	文件：273.67 Kbytes Page：12 Pages	HEXFET? Power MOSFET ( VDSS = 40V , RDS(on) = 5.5m廓 , ID = 42A ) AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch	IRF International Rectifier	IRF
IRFU4104PBF	文件：4.26019 Mbytes Page：11 Pages	Advanced Process Technology Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU4105	文件：3.74603 Mbytes Page：10 Pages	Ultra Low On-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU4105PBF	文件：240.03 Kbytes Page：10 Pages	HEXFET Power MOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p	IRF International Rectifier	IRF
IRFU4105PBF	文件：244.71 Kbytes Page：11 Pages	Ultra Low On-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p	IRF International Rectifier	IRF
IRFU4105PBF	文件：3.84791 Mbytes Page：10 Pages	Ultra Low On-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU4105PBF	文件：244.71 Kbytes Page：11 Pages	Ultra Low On-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p	IRF International Rectifier	IRF
IRFU4105PBF	文件：3.84606 Mbytes Page：10 Pages	Ultra Low On-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU4105Z	文件：206.97 Kbytes Page：11 Pages	Power MOSFET(Vds=55V, Rds(on)=24.5mohm, Id=30A) AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch	IRF International Rectifier	IRF
IRFU4105Z	文件：1.07008 Mbytes Page：11 Pages	Advanced Process Technology Description SpecificallydesignedforAutomotiveapplications,thiMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitive	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU4105ZPBF	文件：267.36 Kbytes Page：11 Pages	AUTOMOTIVE MOSFET Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescomb	IRF International Rectifier	IRF
IRFU4105ZPBF	文件：4.25111 Mbytes Page：11 Pages	AUTOMOTIVE MOSFET AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU4105ZPBF	文件：4.26926 Mbytes Page：11 Pages	AUTOMOTIVE MOSFET AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU410B	文件：626.65 Kbytes Page：9 Pages	500V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRFU4104	文件：247.48 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRFU4104	文件：190.64 Kbytes Page：12 Pages	Advanced Process Technology	IRF International Rectifier	IRF

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詳細(xì)參數(shù)

型號(hào)：
IRFU410
制造商：
INTERSIL
制造商全稱：
Intersil Corporation
功能描述：
1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市星佑電子有限公司	IRFU410	IR	06+	TO-251	12000	原裝庫存	詢價(jià)
深圳市博浩通科技有限公司	IRFU410	IR/FSC	23+	TO-251	5880	專業(yè)優(yōu)勢(shì)供應(yīng)	詢價(jià)
瀚佳科技(深圳)有限公司	IRFU410	IR	24+	TO252	16800	絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!?	詢價(jià)
深圳市鼎欣微電子有限公司	IRFU410	IR	21+	TO-251	30000	只做正品原裝現(xiàn)貨	詢價(jià)
深圳市國宇半導(dǎo)體科技有限公司	IRFU410	IR/FSC	23+	I-PAK	10000	公司只做原裝正品	詢價(jià)
深圳龐田科技有限公司	IRFU410	FSC	2023+環(huán)?，F(xiàn)貨	TO-251	10000	專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù)	詢價(jià)
深圳市創(chuàng)新跡電子有限公司	IRFU410	IR	23+	TO-251	6000	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價(jià)
深圳市宏世佳電子科技有限公司	IRFU410	IR	2023+	TO-252	4675	全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售	詢價(jià)
深圳市安富世紀(jì)電子有限公司	IRFU410	IR	23+	TO-251	6000	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價(jià)
深圳市宏捷佳電子科技有限公司	IRFU410	IR/FSC	24+	I-PAK	12300	獨(dú)立分銷商公司只做原裝誠心經(jīng)營免費(fèi)試樣正品保證	詢價(jià)

更多IRFU410供應(yīng)商更新時(shí)間2025-1-8 10:31:00

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