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首頁 >IRFR9220TRPBFA>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IRFR9220TRPBFA	文件：4.55832 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9220TRPBFA	文件：785.7 Kbytes Page：13 Pages	Power MOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9220TRR	文件：2.04248 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9220TRR	文件：4.43521 Mbytes Page：7 Pages	DynamicdV/dtRating DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9220TRRA	文件：4.55832 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9220TRRPBF	文件：2.04248 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9220TRRPBF	文件：4.43521 Mbytes Page：7 Pages	DynamicdV/dtRating DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9220TRRPBFA	文件：4.55832 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9220TRRPBFA	文件：785.7 Kbytes Page：13 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFU9220	文件：169 Kbytes Page：6 Pages	PowerMOSFET(Vdss=-200V,Rds(on)=1.5ohm,Id=-3.6A) DESCRIPTION TheHEXFEtechnologyisthekeytoInternationalRectifiersadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. FEATURES ?	IRF International Rectifier	IRF
IRFU9220	文件：2.04248 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFU9220	文件：99.42 Kbytes Page：8 Pages	3.6A,200V,1.500Ohm,P-ChannelPowerMOSFETs TheseareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecificlevelofenergyintheavalanchebreakdownmodeofoperation.TheseareP-Channelenhancement-modesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switching	Intersil Intersil Corporation	Intersil
IRFU9220	文件：4.5583 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU9220	文件：4.43521 Mbytes Page：7 Pages	DynamicdV/dtRating DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU9220	文件：4.55832 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU9220	文件：785.7 Kbytes Page：13 Pages	PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR9220,SiHFR9220) ?Straightlead(IRFUFU9220,SiHFU9220) ?Availableintapeandreel ?P-channel ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFU9220PBF	文件：2.04248 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFU9220PBF	文件：1.08269 Mbytes Page：10 Pages	HEXFET?PowerMOSFET	IRF International Rectifier	IRF
IRFU9220PBF	文件：4.5583 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU9220PBF	文件：4.55832 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI

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供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市中福國際管理有限公司	IRFR9220TRPbFa	VISHAY/威世	23+	TO-252	360000	交期準(zhǔn)時服務(wù)周到	詢價
貿(mào)澤芯城（深圳）電子科技有限公司	IRFR9220TRPBF-BE3	VISHAY/威世	23+		10000	原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種	詢價
深圳市高捷芯城科技有限公司	IRFR9220TRPBF-BE3	VISHAY(威世)	23+	TO252	7350	現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費送樣,原廠技術(shù)支持!!!	詢價
現(xiàn)代芯城（深圳）科技有限公司	IRFR9220TRPBF-BE3		24+	N/A	52000	一級代理-主營優(yōu)勢-實惠價格-不悔選擇	詢價
深圳市安富世紀(jì)電子有限公司	IRFR9220TRPBFMOS(場效應(yīng)管)	VISHAY/威世	23+	TO-252	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價
深圳市仟禧電子有限公司	IRFR9220TRPBFMOS(場效應(yīng)管)	VISHAY/威世	22+	DPAK	20000	保證原裝正品,假一陪十	詢價
深圳市湘達(dá)電子科技有限公司	IRFR9220TRPBFMOS(場效應(yīng)管)	VISHAY/威世	2022+	D-PAK(TO-252)	8000	只做原裝支持實單,有單必成。	詢價
深圳市科恒偉業(yè)電子有限公司	IRFR9220TRPBFMOS(場效應(yīng)管)	VISHAY/威世	21+	D-PAK	9852	只做原裝正品現(xiàn)貨!或訂貨假一賠十!	詢價
深圳市賽美科科技有限公司	IRFR9220TRPBFMOS(場效應(yīng)管)	VISHAY/威世		TO252	125000	一級代理原裝正品,價格優(yōu)勢,長期供應(yīng)!	詢價
深圳龐田科技有限公司	IRFR9220TRPBFMOS(場效應(yīng)管)	VISHAY/威世	2023+	SOT-252	20000	AI智能識別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站	詢價

更多IRFR9220TRPBFA供應(yīng)商更新時間2025-1-18 10:34:00

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