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IRFR9210中文資料KERSEMI數(shù)據(jù)手冊PDF規(guī)格書

IRFR9210
廠商型號

IRFR9210

功能描述

Power MOSFET

文件大小

4.46201 Mbytes

頁面數(shù)量

7

生產(chǎn)廠商 Kersemi Electronic Co., Ltd.
企業(yè)簡稱

KERSEMI

中文名稱

Kersemi Electronic Co., Ltd.官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二

更新時間

2024-11-18 22:59:00

IRFR9210規(guī)格書詳情

DESCRIPTION

The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET

design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness.

The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.

FEATURES

? Dynamic dV/dt Rating

? Repetitive Avalanche Rated

? Surface Mount (IRFR9210/SiHFR9210)

? Straight Lead (IRFU9210/SiHFU9210)

? Available in Tape and Reel

? P-Channel

? Fast Switching

? Lead (Pb)-free Available

產(chǎn)品屬性

  • 型號:

    IRFR9210

  • 功能描述:

    MOSFET P-Chan 200V 1.9 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應商 型號 品牌 批號 封裝 庫存 備注 價格
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