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IRFR9120TRLPBF中文資料威世科技數(shù)據(jù)手冊(cè)PDF規(guī)格書

IRFR9120TRLPBF
廠商型號(hào)

IRFR9120TRLPBF

功能描述

Power MOSFET

文件大小

1.89003 Mbytes

頁面數(shù)量

8

生產(chǎn)廠商 Vishay Siliconix
企業(yè)簡(jiǎn)稱

Vishay威世科技

中文名稱

威世科技半導(dǎo)體官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二原廠數(shù)據(jù)手冊(cè)到原廠下載

更新時(shí)間

2024-11-18 18:34:00

IRFR9120TRLPBF規(guī)格書詳情

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness.

The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.

FEATURES

? Dynamic dV/dt Rating

? Repetitive Avalanche Rated

? Surface Mount (IRFR9120, SiHFR9120)

? Straight Lead (IRFU9120, SiHFU9120)

? Available in Tape and Reel

? P-Channel

? Fast Switching

? Material categorization: For definitions of compliance

?? please see www.vishay.com/doc?99912

產(chǎn)品屬性

  • 型號(hào):

    IRFR9120TRLPBF

  • 功能描述:

    MOSFET P-Chan 100V 5.6 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
IR
23+
TO-252
4500
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100000
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23+
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
詢價(jià)
IR
23+
D-PAK
19526
詢價(jià)
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21+
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9852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
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24+
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30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
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68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
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VISHAY/威世
2022
SOT252
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
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7500
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21+
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35200
一級(jí)代理/放心采購
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