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IRFP9140

P-CHANNEL POWER MOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導體

IRFP9140

19A, 100V, 0.200 Ohm, P-Channel Power MOSFET

ThisisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.ItisaP-Channelenhancementmodesilicongatepowerfieldeffecttransistordesignedforapplicationssuchasswitchingregulators,switchingc

Intersil

Intersil Corporation

IRFP9140

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude

VishayVishay Siliconix

威世科技威世科技半導體

IRFP9140

P-CHANNEL POWER MOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fastswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliablility

SamsungSamsung semiconductor

三星三星半導體

IRFP9140

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?P-channel ?Isolatedcentralmountinghole ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatash

VishayVishay Siliconix

威世科技威世科技半導體

IRFP9140

isc P-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=-19A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.2Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFP9140

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFP9140_V01

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?P-channel ?Isolatedcentralmountinghole ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatash

VishayVishay Siliconix

威世科技威世科技半導體

IRFP9140N

Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFP9140N

isc P-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=-23A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.117Ω(Max)@VGS=-10V DESCRIPTION ·Combinewiththefastswitchingspeedandruggedizeddevice design,providethedesignerwithanextremelyefficientand rel

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號：

    IRFP9140

  • 功能描述：

    MOSFET P-Chan 100V 21 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IR
24+
TO247
7250
絕對原裝現(xiàn)貨,價格低,歡迎詢購!
 詢價
IR
22+
TO-3P
7500
只做原裝正品假一賠十!正規(guī)渠道訂貨!
 詢價
IR
23+
TO-3P
6925
原廠原裝正品
 詢價
IR
24+
TO 3P
161575
明嘉萊只做原裝正品現(xiàn)貨
 詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
IR
23+
TO-247AC
19526
詢價
IR
15+
TO-247
11560
全新原裝,現(xiàn)貨庫存,長期供應
 詢價
INTERSIL
23+
TO-247
8890
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
 詢價
IR
05+
TO-247
1200
全新原裝 絕對有貨
 詢價
HARRIS
24+
TO-3P
77
詢價
更多IRFP9140供應商 更新時間2025-3-21 8:40:00

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