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IRFP440R

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFS440

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFS440A

AdvancedPowreMOSFET

FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=500V ?LowerRDS(ON):0.638?(Typ.)

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFS440A

iscSiliconNPNPowerTransistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFS440B

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFY440

N-CHANNELPOWERMOSFETFORHI-RELAPPLICATIONS

SEME-LAB

Seme LAB

IRFY440

POWERMOSFETTHRU-HOLE(TO-257AA)

POWERMOSFETTHRU-HOLE(TO-257AA) HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-e

IRF

International Rectifier

IRFY440C

N-ChannelMOSFETinaHermeticallysealed

SEME-LAB

Seme LAB

IRFY440C

SimpleDriveRequirements

IRF

International Rectifier

IRFY440C

POWERMOSFETTHRU-HOLE(TO-257AA)

POWERMOSFETTHRU-HOLE(TO-257AA) HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-e

IRF

International Rectifier

IRFY440CM

POWERMOSFETN-CHANNEL(BVdss=500V,Rds(on)=0.85ohm,Id=7.0A)

POWERMOSFETTHRU-HOLE(TO-257AA) HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-e

IRF

International Rectifier

IRFY440CM

POWERMOSFETTHRU-HOLE(TO-257AA)

POWERMOSFETTHRU-HOLE(TO-257AA) HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-e

IRF

International Rectifier

IRFY440M

POWERMOSFETTHRU-HOLE(TO-257AA)

POWERMOSFETTHRU-HOLE(TO-257AA) HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-e

IRF

International Rectifier

IRGB440U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=500V,@Vge=15V,Ic=22A)

Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof

IRF

International Rectifier

IRGB440U

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRGP440U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=500V,@Vge=15V,Ic=22A)

Introduction Thereliabilityreportisasummaryofthetestdatacollatedsincetheimplementationofthereliabilityprogramme.Thisreportwillbeperiodicallyupdatedtypicallyonaquarterlybasis.Futurepublicationsofthisreportwillalsoincludeasappropriateadditionalinformationto

IRF

International Rectifier

IRGP440U

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IS440

OPICLIGHTDETECTORWITHBUILTINSIGNALPROCESS-INGCURCUITFORLIGHTMODULATIONSYSTEM

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司（SMA）

IS440F

OPICLIGHTDETECTORWITHBUILTINSIGNALPROCESS-INGCURCUITFORLIGHTMODULATIONSYSTEM

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國夏普微電子公司（SMA）

ISCN440P

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=60V(Min.) ·LowCollectorSaturationVoltage :VCE(sat)=1.1V(Max.)@IC=5A ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforlowfrequencypoweramplifierapplicatio

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數

  • 型號：

    IRFP440R

  • 功能描述：

    TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8.8A I(D) | TO-247

供應商型號品牌批號封裝庫存備注價格
IR
22+
TO-3PN
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
TO-3PN
8000
專注配單,只做原裝進口現貨
 詢價
IR
23+
TO-3PN
8000
專注配單,只做原裝進口現貨
 詢價
IR
23+
TO-3PN
7000
詢價
IR
23+
TO-247
50000
全新原裝正品現貨,支持訂貨
 詢價
VISHAY/威世
2022+
TO-247AC
8000
只做原裝支持實單,有單必成。
 詢價
VISHAY/威世
2023+
TO-247AC
50000
AI智能識別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站
 詢價
IR
24+
TO247
58000
全新原廠原裝正品現貨,可提供技術支持、樣品免費!
 詢價
MOSPEC
24+
TO-3P
8866
詢價
IR/VISHAY
24+
TO-247
12300
獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證
 詢價
更多IRFP440R供應商 更新時間2025-1-6 10:01:00

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