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首頁 >IRFS440A>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IRFS440A	文件：222.67 Kbytes Page：7 Pages	Advanced Powre MOSFET FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=500V ?LowerRDS(ON):0.638?(Typ.)	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
IRFS440A	文件：64.65 Kbytes Page：2 Pages	isc Silicon NPN Power Transistor DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IRFS440B	文件：687.3 Kbytes Page：8 Pages	500VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi	FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司	Fairchild
IRFY440	文件：14.29 Kbytes Page：2 Pages	N-CHANNELPOWERMOSFETFORHI-RELAPPLICATIONS	SEME-LAB Seme LAB	SEME-LAB
IRFY440	文件：135.77 Kbytes Page：7 Pages	POWERMOSFETTHRU-HOLE(TO-257AA) POWERMOSFETTHRU-HOLE(TO-257AA) HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-e	IRF International Rectifier	IRF
IRFY440C	文件：15.6 Kbytes Page：1 Pages	N-ChannelMOSFETinaHermeticallysealed	SEME-LAB Seme LAB	SEME-LAB
IRFY440C	文件：189.4 Kbytes Page：7 Pages	SimpleDriveRequirements	IRF International Rectifier	IRF
IRFY440C	文件：189.4 Kbytes Page：7 Pages	POWERMOSFETTHRU-HOLE(TO-257AA) POWERMOSFETTHRU-HOLE(TO-257AA) HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-e	IRF International Rectifier	IRF
IRFY440CM	文件：300.25 Kbytes Page：6 Pages	POWERMOSFETN-CHANNEL(BVdss=500V,Rds(on)=0.85ohm,Id=7.0A) POWERMOSFETTHRU-HOLE(TO-257AA) HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-e	IRF International Rectifier	IRF
IRFY440CM	文件：189.4 Kbytes Page：7 Pages	POWERMOSFETTHRU-HOLE(TO-257AA) POWERMOSFETTHRU-HOLE(TO-257AA) HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-e	IRF International Rectifier	IRF
IRFY440M	文件：135.77 Kbytes Page：7 Pages	POWERMOSFETTHRU-HOLE(TO-257AA) POWERMOSFETTHRU-HOLE(TO-257AA) HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-e	IRF International Rectifier	IRF
IRGB440U	文件：252.36 Kbytes Page：6 Pages	INSULATEDGATEBIPOLARTRANSISTOR(Vces=500V,@Vge=15V,Ic=22A) Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof	IRF International Rectifier	IRF
IRGB440U	文件：98.39 Kbytes Page：35 Pages	FitRate/EquivalentDeviceHours	IRF International Rectifier	IRF
IRGP440U	文件：254.96 Kbytes Page：6 Pages	INSULATEDGATEBIPOLARTRANSISTOR(Vces=500V,@Vge=15V,Ic=22A) Introduction Thereliabilityreportisasummaryofthetestdatacollatedsincetheimplementationofthereliabilityprogramme.Thisreportwillbeperiodicallyupdatedtypicallyonaquarterlybasis.Futurepublicationsofthisreportwillalsoincludeasappropriateadditionalinformationto	IRF International Rectifier	IRF
IRGP440U	文件：98.39 Kbytes Page：35 Pages	FitRate/EquivalentDeviceHours	IRF International Rectifier	IRF
IS440	文件：135.88 Kbytes Page：4 Pages	OPICLIGHTDETECTORWITHBUILTINSIGNALPROCESS-INGCURCUITFORLIGHTMODULATIONSYSTEM	SHARPSharp Microelectronics of the Americas (SMA) 夏普微美國夏普微電子公司（SMA）	SHARP
IS440F	文件：135.88 Kbytes Page：4 Pages	OPICLIGHTDETECTORWITHBUILTINSIGNALPROCESS-INGCURCUITFORLIGHTMODULATIONSYSTEM	SHARPSharp Microelectronics of the Americas (SMA) 夏普微美國夏普微電子公司（SMA）	SHARP
ISCN440P	文件：281.32 Kbytes Page：2 Pages	iscSiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=60V(Min.) ·LowCollectorSaturationVoltage :VCE(sat)=1.1V(Max.)@IC=5A ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforlowfrequencypoweramplifierapplicatio	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
JXWBHP-M440	文件：61.03 Kbytes Page：1 Pages	BroadbandMillimeterMixer6to40GHz	AAC American Accurate Components, Inc.	AAC
JXWBHP-M440C	文件：61.03 Kbytes Page：1 Pages	BroadbandMillimeterMixer6to40GHz	AAC American Accurate Components, Inc.	AAC

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詳細參數(shù)

型號：
IRFS440A
制造商：
FAIRCHILD
制造商全稱：
Fairchild Semiconductor
功能描述：
Advanced Powre MOSFET

供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市星佑電子有限公司	IRFS440A	仙童	06+	TO-247	1200	原裝庫存	詢價
深圳市永貝爾科技有限公司	IRFS440A	FAIRCHILD	23+	NA	19960	只做進口原裝,終端工廠免費送樣	詢價
瀚佳科技(深圳)有限公司	IRFS440A	FAIRCHILD	24+		35200	一級代理/放心采購	詢價
貿(mào)澤芯城（深圳）電子科技有限公司	IRFS440A	ISC/固電	23+	TO-3PF	10000	原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種	詢價
深圳市昌和盛利電子有限公司	IRFS440B	FAIRCHILD	23+	TO-3PF	9526		詢價
京海半導體(深圳)有限公司	IRFS440B	FAIRCHILD/仙童	21+	TO-3P	10000	原裝現(xiàn)貨假一罰十	詢價
深圳市宏世佳電子科技有限公司	IRFS440B	FAIRCHILD	2023+	TO-3P	4675	全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售	詢價
深圳市安富世紀電子有限公司	IRFS440B	FAIRCHILD	23+	TO-3P	8000	只做原裝現(xiàn)貨	詢價
天津市博通航睿技術有限公司	IRFS440B	FAIRCHILD	23+	TO-3P	7000		詢價
深圳市河鋒鑫科技有限公司	IRFS441	IR	22+	TO-3P	6000	終端可免費供樣,支持BOM配單	詢價

更多IRFS440A供應商更新時間2025-1-5 9:16:00

詳細參數(shù)

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