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IRFP22N60K

SMPS MOSFET

Benefits ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?EnhancedBodyDiodedv/dtCapability Applications ?HardSwitchingPrimaryorPFSSwitch ?SwitchM

IRF

International Rectifier

IRFP22N60K

Power MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive ??Requirement ?ImprovedGate,AvalancheandDynamicdV/dt ??Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage ??andCurrent ?EnhancedBodyDiodedV/dtCapability ?ComplianttoRoHSDirective2002/95/EC BENEFITS

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP22N60K

iscN-Channel MOSFET Transistor

?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance: RDS(ON)=0.28?(MAX) ?Enhancementmode: Vth=3.0to5.0V(VDS=10V,ID=0.25mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP22N60K

Power MOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive requirement ?Improvedgate,avalancheanddynamicdV/dt ruggedness ?Fullycharacterizedcapacitanceandavalanchevoltage andcurrent ?EnhancedbodydiodedV/dtcapability ?Materialcategorization:fordefinitionsofcompliance ple

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP22N60K_V01

Power MOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive requirement ?Improvedgate,avalancheanddynamicdV/dt ruggedness ?Fullycharacterizedcapacitanceandavalanchevoltage andcurrent ?EnhancedbodydiodedV/dtcapability ?Materialcategorization:fordefinitionsofcompliance ple

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP22N60KPBF

HEXFET Power MOSFET

Benefits ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?EnhancedBodyDiodedv/dtCapability Applications ?HardSwitchingPrimaryorPFSSwitch ?SwitchM

IRF

International Rectifier

IRFP22N60KPBF

Power MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive ??Requirement ?ImprovedGate,AvalancheandDynamicdV/dt ??Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage ??andCurrent ?EnhancedBodyDiodedV/dtCapability ?ComplianttoRoHSDirective2002/95/EC BENEFITS

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IXFC22N60P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.36Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFC22N60P

PolarHVHiPerFETPowerMOSFETISOPLUS220

IXYS

IXYS Corporation

IXFH22N60P

PolarHVHiPerFETPowerMOSFETs

IXYS

IXYS Corporation

IXFH22N60P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=22A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.35Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFP22N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=360mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFQ22N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=390mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFV22N60P

PolarHVHiPerFETPowerMOSFETs

IXYS

IXYS Corporation

IXFV22N60PS

PolarHVHiPerFETPowerMOSFETs

IXYS

IXYS Corporation

IXTQ22N60P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTQ22N60P

PolarHVTMPowerMOSFETN-ChannelEnhancementMode

IXYS

IXYS Corporation

IXTV22N60P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTV22N60P

PolarHVTMPowerMOSFETN-ChannelEnhancementMode

IXYS

IXYS Corporation

IXTV22N60PS

PolarHVTMPowerMOSFETN-ChannelEnhancementMode

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號：

    IRFP22N60K

  • 功能描述：

    MOSFET N-Chan 600V 22 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
2020+
TO-247
8000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價
IR
21+
TO-247
6000
原裝正品
 詢價
IR
17+
TO-247AC
31518
原裝正品 可含稅交易
 詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
IR
24+
TO-247AC
8866
詢價
IR
23+
TO-247
35890
詢價
IR
2015+
TO-247AC
12500
全新原裝,現(xiàn)貨庫存長期供應(yīng)
 詢價
IR
16+
原廠封裝
237
原裝現(xiàn)貨假一罰十
 詢價
IR
17+
TO-247
6200
100%原裝正品現(xiàn)貨
 詢價
IR
23+
TO-247AC
8600
全新原裝現(xiàn)貨
 詢價
更多IRFP22N60K供應(yīng)商 更新時間2024-10-26 11:12:00

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