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IRFP260M

N-Channel MOSFET Transistor

·DESCRITION ·HighSpeedPowerSwitching ·FEATURES ·Staticdrain-sourceon-resistance:RDS(on)≤40m? ·Enhancementmode: ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFP260MPBF

HEXFET? Power MOSFET

VDSS=200V RDS(on)=0.04? ID=50A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETP

IRF

International Rectifier

IRFP260MPBF

Advanced Process Technology

IRF

International Rectifier

IRFP260MPBF

Advanced Process Technology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRFP260MPBF_15

Advanced Process Technology

IRF

International Rectifier

IRFP260N

PowerMOSFET(Vdss=200V,Rds(on)=0.04ohm,Id=50A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFP260N

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?FullyAvalancheRated ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤40m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFP260NPBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFP260NPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRFP260NPBF

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-247packaging ?Easeofparalleling ?Highspeedswitching ?Hardswitchedandhighfrequencycircuits ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號:

    IRFP260M

  • 功能描述:

    MOSFET MOSFT 200V 49A 40mOhm 156nCAC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應商型號品牌批號封裝庫存備注價格
IR
12+18+
TO-247
75
只做原裝正品
詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網
詢價
IR
23+
TO-247
9526
詢價
IR
2020+
TO247
25
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
IR
1816+
TO-247
6523
科恒偉業(yè)!只做原裝正品,假一賠十!
詢價
NA
19+
74907
原廠代理渠道,每一顆芯片都可追溯原廠;
詢價
1000
原裝正品
詢價
IR
20+
TO-247
38900
原裝優(yōu)勢主營型號-可開原型號增稅票
詢價
INFINE0N
21+
TO-247
32568
100%進口原裝!長期供應!絕對優(yōu)勢價格(誠信經營
詢價
IR
2447
TO-247
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
詢價
更多IRFP260M供應商 更新時間2025-3-20 17:14:00