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IRFL4105

Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=3.7A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFL4105

Ultra Low On-Resistance

Description TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderingtechniques.Itsuniquepackagedesignallowsforeasyautomaticpickand-placeaswithotherSOTorSOICpackagesbuthastheaddedadvantageofimprovedthermalperformanceduetoanenla

KERSEMI

Kersemi Electronic Co., Ltd.

IRFL4105

Marking:IRFL4105;Package:SOT-223;60V N-Channel IRFL4105

GeneralDescription TheselogiclevelN-ChannelenhancementThisvery highdensityprocessisespeciallytailoredto minimizeon-stateresistanceandprovide superior switchingperformance,andwithstandhigh energypulse intheavalancheandcommutation modes. Thesedevicesareparticula

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

IRFL4105PBF

HEXFET? Power MOSFET

IRF

International Rectifier

IRFL4105PBF

Advanced Process Technology

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFL4105PBF

HEXFET? Power MOSFET

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRFL4105PBF

Advanced Process Technology

IRF

International Rectifier

IRFL4105PBF_15

Advanced Process Technology

IRF

International Rectifier

IRFL4105TRPBF

Advanced Process Technology

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR4105

PowerMOSFET(Vdss=55V,Rds(on)=0.045ohm,Id=27A??

IRF

International Rectifier

IRFR4105

N-ChannelMOSFETTransistor

?DESCRITION ?FastSwitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤45m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFR4105

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR4105

55VN-ChannelMOSFET

Description UltraLowOn-Resistance FastSwitching FullyAvalancheRated Lead-Free VDS(V)=50V ID=27A(VGS=10V) RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司

IRFR4105PBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRFR4105PBF

UltraLowOn-Resistance

IRF

International Rectifier

IRFR4105PBF

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR4105PBF

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR4105PBF

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRFR4105PBF

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRFR4105TR

55VN-ChannelMOSFET

Description UltraLowOn-Resistance FastSwitching FullyAvalancheRated Lead-Free VDS(V)=50V ID=27A(VGS=10V) RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司

詳細(xì)參數(shù)

  • 型號:

    IRFL4105

  • 功能描述:

    MOSFET N-CH 55V 3.7A SOT223

  • RoHS:

  • 類別:

    分離式半導(dǎo)體產(chǎn)品 >> FET - 單

  • 系列:

    HEXFET®

  • 標(biāo)準(zhǔn)包裝:

    1,000

  • 系列:

    MESH OVERLAY™ FET

  • 型:

    MOSFET N 通道,金屬氧化物 FET

  • 特點:

    邏輯電平門

  • 漏極至源極電壓(Vdss):

    200V 電流 - 連續(xù)漏極(Id) @ 25°

  • C:

    18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°

  • C:

    180 毫歐 @ 9A,10V Id 時的

  • Vgs(th)(最大):

    4V @ 250µA 閘電荷(Qg) @

  • Vgs:

    72nC @ 10V 輸入電容(Ciss) @

  • Vds:

    1560pF @ 25V 功率 -

  • 最大:

    40W

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-220-3 整包

  • 供應(yīng)商設(shè)備封裝:

    TO-220FP

  • 包裝:

    管件

供應(yīng)商型號品牌批號封裝庫存備注價格
IR/VISHAY
SOT223
30216
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S
詢價
IOR
24+
SOT22
5000
原廠授權(quán)代理 價格絕對優(yōu)勢
詢價
IR
23+
SOT-223
4000
原廠原裝正品
詢價
IR
24+
SOT-223
500757
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
詢價
IR
22+
SOT-223
3500
福安甌為您提供真芯庫存,真誠服務(wù)
詢價
IR
23+
SOT-223
19526
詢價
IOR
05/06+
SOT223
336
全新原裝100真實現(xiàn)貨供應(yīng)
詢價
IR
17+
SOT-223
6200
詢價
IR
24+
原廠封裝
5182
原裝現(xiàn)貨假一罰十
詢價
更多IRFL4105供應(yīng)商 更新時間2025-1-18 14:00:00