零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRFL4105 | Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=3.7A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | |
IRFL4105 | Ultra Low On-Resistance Description TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderingtechniques.Itsuniquepackagedesignallowsforeasyautomaticpickand-placeaswithotherSOTorSOICpackagesbuthastheaddedadvantageofimprovedthermalperformanceduetoanenla | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | |
IRFL4105 | Marking:IRFL4105;Package:SOT-223;60V N-Channel IRFL4105 GeneralDescription TheselogiclevelN-ChannelenhancementThisvery highdensityprocessisespeciallytailoredto minimizeon-stateresistanceandprovide superior switchingperformance,andwithstandhigh energypulse intheavalancheandcommutation modes. Thesedevicesareparticula | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體 | EVVOSEMI | |
HEXFET? Power MOSFET | IRF International Rectifier | IRF | ||
Advanced Process Technology | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
HEXFET? Power MOSFET | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Advanced Process Technology | IRF International Rectifier | IRF | ||
Advanced Process Technology | IRF International Rectifier | IRF | ||
Advanced Process Technology | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET(Vdss=55V,Rds(on)=0.045ohm,Id=27A?? | IRF International Rectifier | IRF | ||
N-ChannelMOSFETTransistor ?DESCRITION ?FastSwitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤45m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
UltraLowOn-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
55VN-ChannelMOSFET Description UltraLowOn-Resistance FastSwitching FullyAvalancheRated Lead-Free VDS(V)=50V ID=27A(VGS=10V) RDS(ON) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司 | UMW | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
UltraLowOn-Resistance | IRF International Rectifier | IRF | ||
UltraLowOn-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
UltraLowOn-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
UltraLowOn-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
UltraLowOn-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
55VN-ChannelMOSFET Description UltraLowOn-Resistance FastSwitching FullyAvalancheRated Lead-Free VDS(V)=50V ID=27A(VGS=10V) RDS(ON) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司 | UMW |
詳細(xì)參數(shù)
- 型號:
IRFL4105
- 功能描述:
MOSFET N-CH 55V 3.7A SOT223
- RoHS:
否
- 類別:
分離式半導(dǎo)體產(chǎn)品 >> FET - 單
- 系列:
HEXFET®
- 標(biāo)準(zhǔn)包裝:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金屬氧化物 FET
- 特點:
邏輯電平門
- 漏極至源極電壓(Vdss):
200V 電流 - 連續(xù)漏極(Id) @ 25°
- C:
18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫歐 @ 9A,10V Id 時的
- Vgs(th)(最大):
4V @ 250µA 閘電荷(Qg) @
- Vgs:
72nC @ 10V 輸入電容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安裝類型:
通孔
- 封裝/外殼:
TO-220-3 整包
- 供應(yīng)商設(shè)備封裝:
TO-220FP
- 包裝:
管件
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR/VISHAY |
SOT223 |
30216 |
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S |
詢價 | |||
IOR |
24+ |
SOT22 |
5000 |
原廠授權(quán)代理 價格絕對優(yōu)勢 |
詢價 | ||
IR |
23+ |
SOT-223 |
4000 |
原廠原裝正品 |
詢價 | ||
IR |
24+ |
SOT-223 |
500757 |
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系 |
詢價 | ||
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
IR |
22+ |
SOT-223 |
3500 |
福安甌為您提供真芯庫存,真誠服務(wù) |
詢價 | ||
IR |
23+ |
SOT-223 |
19526 |
詢價 | |||
IOR |
05/06+ |
SOT223 |
336 |
全新原裝100真實現(xiàn)貨供應(yīng) |
詢價 | ||
IR |
17+ |
SOT-223 |
6200 |
詢價 | |||
IR |
24+ |
原廠封裝 |
5182 |
原裝現(xiàn)貨假一罰十 |
詢價 |
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