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IRFIBE30G中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書

IRFIBE30G
廠商型號

IRFIBE30G

功能描述

Power MOSFET

文件大小

1.41183 Mbytes

頁面數(shù)量

7

生產(chǎn)廠商 Vishay Siliconix
企業(yè)簡稱

Vishay威世科技

中文名稱

威世科技半導(dǎo)體官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-22 18:29:00

IRFIBE30G規(guī)格書詳情

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. The isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsinkusing a single clip or by a single screw fixing.

FEATURES

? Isolated Package

? High Voltage Isolation = 2.5 kVRMS(t = 60 s; f = 60 Hz)

? Sink to Lead Creepage Distance = 4.8 mm

? Dynamic dV/dt Rating

? Low Thermal Resistance

? Lead (Pb)-free Available

產(chǎn)品屬性

  • 型號:

    IRFIBE30G

  • 功能描述:

    MOSFET N-Chan 800V 2.1 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
IR
24+
TO-220F
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
詢價
IR
2016+
TO-220F
6528
房間原裝進口現(xiàn)貨假一賠十
詢價
VISHAY
/
TO-220F
25
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
IR
23+
TO-220
9526
詢價
IR
23+
TO-220F
10000
專做原裝正品,假一罰百!
詢價
Vishay Siliconix
22+
TO2203 Isolated Tab
9000
原廠渠道,現(xiàn)貨配單
詢價
IR
17+
TO-220F
6200
詢價
VISHAY
22+23+
TO-220F
15778
絕對原裝正品全新進口深圳現(xiàn)貨
詢價
IR
TO-220F
68900
原包原標(biāo)簽100%進口原裝常備現(xiàn)貨!
詢價
VISHAY/威世
21+
NA
12820
只做原裝,質(zhì)量保證
詢價