IRFD113中文資料GESS數(shù)據(jù)手冊PDF規(guī)格書
IRFD113規(guī)格書詳情
POWER-MOSFET FIELD EFFECT POWER TRANSISTOR
This series of N-Channel Enhancement-mode Power MOSFET utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.
產(chǎn)品屬性
- 型號:
IRFD113
- 功能描述:
MOSFET N-Chan 100V 1.0 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
DIP-4 |
8500 |
只做原裝正品假一賠十為客戶做到零風(fēng)險!! |
詢價 | ||
IR |
22+ |
DIP-4 |
8000 |
原裝正品支持實單 |
詢價 | ||
IOR |
24+ |
DIP-4 |
100 |
詢價 | |||
MOT |
9207 |
382 |
公司優(yōu)勢庫存 熱賣中! |
詢價 | |||
SIX |
1535+ |
309 |
詢價 | ||||
VIS |
24+ |
DIP |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
IR |
2022+ |
DIP-4 |
8600 |
英瑞芯只做原裝正品 |
詢價 | ||
IR |
18+ |
DIP |
85600 |
保證進口原裝可開17%增值稅發(fā)票 |
詢價 | ||
HARRIS |
2447 |
DIP4 |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
IR |
23+ |
DIP-4 |
8000 |
只做原裝現(xiàn)貨 |
詢價 |