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IRFD113中文資料GESS數(shù)據(jù)手冊PDF規(guī)格書

IRFD113
廠商型號

IRFD113

功能描述

POWER-MOSFET FIELD EFFECT POWER TRANSISTOR

文件大小

112.88 Kbytes

頁面數(shù)量

2

生產(chǎn)廠商 GE Solid State
企業(yè)簡稱

GESS

中文名稱

GE Solid State

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二

更新時間

2025-5-3 18:04:00

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IRFD113規(guī)格書詳情

POWER-MOSFET FIELD EFFECT POWER TRANSISTOR

This series of N-Channel Enhancement-mode Power MOSFET utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.

This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.

產(chǎn)品屬性

  • 型號:

    IRFD113

  • 功能描述:

    MOSFET N-Chan 100V 1.0 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
IR
24+
DIP-4
8500
只做原裝正品假一賠十為客戶做到零風(fēng)險!!
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IR
22+
DIP-4
8000
原裝正品支持實單
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IOR
24+
DIP-4
100
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MOT
9207
382
公司優(yōu)勢庫存 熱賣中!
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SIX
1535+
309
詢價
VIS
24+
DIP
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
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IR
2022+
DIP-4
8600
英瑞芯只做原裝正品
詢價
IR
18+
DIP
85600
保證進口原裝可開17%增值稅發(fā)票
詢價
HARRIS
2447
DIP4
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
詢價
IR
23+
DIP-4
8000
只做原裝現(xiàn)貨
詢價