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IRFD020中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書

IRFD020
廠商型號(hào)

IRFD020

功能描述

HEXFET TRANSISTORS N-CHANNEL HEXDIP

文件大小

238.94 Kbytes

頁(yè)面數(shù)量

6 頁(yè)

生產(chǎn)廠商 International Rectifier
企業(yè)簡(jiǎn)稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2024-10-26 15:16:00

IRFD020規(guī)格書詳情

50 Volt, 0.10 Ohm, 1-Watt HEXDIP

HEXFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieves very low on-state resistance combined with high transconductance and extreme device ruggedness. HEXFETs feature all of the established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling, and temperature stability of the electrical parameters.

The HVMDIP 4-pin, Dual-In-Line Package brings the advantages of HVMDIPs to high volume applications where automatic PC board insertion is desirable, such as circuit boards for computers, printers, telecommunications equipment, and consumer products. Their compatibility with automatic insertion equipment, low-profile and end stackable features represent the state-of-the-art in power device packaging.

FEATURES

■ For Automatic Insertion

■ Compact, End Stackable

■ Fast Switching

■ Low Drive Current

■ Easily Paralleled

■ Excellent Temperature Stability

產(chǎn)品屬性

  • 型號(hào):

    IRFD020

  • 功能描述:

    MOSFET N-Chan 50V 2.4 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
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8000
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2020+
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絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!
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2023+
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50000
原裝現(xiàn)貨
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23+
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23+
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專注配單,只做原裝進(jìn)口現(xiàn)貨
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2022+
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6800
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷
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