首頁>IRFD014PBF>規(guī)格書詳情
IRFD014PBF中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書
相關(guān)芯片規(guī)格書
更多IRFD014PBF規(guī)格書詳情
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1 pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.
FEATURES
? Dynamic dV/dt Rating
? For Automatic Insertion
? End Stackable
? 175 °C Operating Temperature
? Fast Switching
? Ease of Paralleling
? Simple Drive Requirements
? Compliant to RoHS Directive 2002/95/EC
產(chǎn)品屬性
- 型號:
IRFD014PBF
- 功能描述:
MOSFET N-Chan 60V 1.7 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Vishay Siliconix |
22+ |
4DIP |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
Vishay Siliconix |
21+ |
4DIP |
13880 |
公司只售原裝,支持實(shí)單 |
詢價(jià) | ||
Vishay |
24+ |
DIP4 |
9000 |
只做原裝正品 有掛有貨 假一賠十 |
詢價(jià) | ||
VISHAY/威世 |
22+ |
HVMDIP-4 |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價(jià) | ||
VISHAY(威世) |
23+ |
HVMDIP |
7863 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價(jià) | ||
ir |
20+ |
dip |
2800 |
絕對全新原裝現(xiàn)貨,歡迎來電查詢 |
詢價(jià) | ||
IR |
23+ |
HEXDIP |
19526 |
詢價(jià) | |||
IR/VISH |
21+ |
65230 |
詢價(jià) | ||||
VISHAY/威世 |
2407+ |
MOS |
30098 |
全新原裝!倉庫現(xiàn)貨,大膽開價(jià)! |
詢價(jià) | ||
IR |
22+ |
HEXDIP-4 |
8000 |
原裝正品支持實(shí)單 |
詢價(jià) |