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IRFBF30

Power MOSFET(Vdss=900V, Rds(on)=3.7ohm, Id=3.6A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?FastSwitching ?EaseofParalleling ?

IRF

International Rectifier

IRFBF30

Power MOSFET

DESCRIPTION ThirdgenerationMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversiallypreferredforallcommercial-industrialapplicationsatpowerdissipationle

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBF30

Power MOSFET

DESCRIPTION ThirdgenerationMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversiallypreferredforallcommercial-industrialapplicationsatpowerdissipationle

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBF30

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBF30

iscN-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFBF30

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBF30L

Power MOSFET

DESCRIPTION ThirdgenerationMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversiallypreferredforallcommercial-industrialapplicationsatpowerdissipationle

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBF30PBF

HEXFET Power MOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?FastSwitching ?EaseofParalleling ?

IRF

International Rectifier

IRFBF30PBF

Power MOSFET

DESCRIPTION ThirdgenerationMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversiallypreferredforallcommercial-industrialapplicationsatpowerdissipationle

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBF30S

Power MOSFET

DESCRIPTION ThirdgenerationMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)packageisuniversiallypreferredforallcommercial-industrialapplicationsatpowerdissipat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBF30_V01

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBF30PBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBF30PBF-BE3

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBF30SLPBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBF30STRLPBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFBF30

  • 功能描述：

    MOSFET N-Chan 900V 3.6 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
VISHAY/威世
23+
TO220
10000
公司只做原裝正品
 詢價(jià)
IR
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
 詢價(jià)
IR
05+
TO-220
7000
自己公司全新庫(kù)存絕對(duì)有貨
 詢價(jià)
IR
15+
TO-220
11560
全新原裝,現(xiàn)貨庫(kù)存,長(zhǎng)期供應(yīng)
 詢價(jià)
IR
23+
TO-220
9896
詢價(jià)
IR
2016+
TO-220
6528
房間原裝進(jìn)口現(xiàn)貨假一賠十
 詢價(jià)
IR
48
原裝正品長(zhǎng)期供貨，如假包賠包換 徐小姐13714450367
 詢價(jià)
IR
23+
TO-220
6680
全新原裝優(yōu)勢(shì)
 詢價(jià)
IR
24+
TO220
500
詢價(jià)
ir
24+
原裝
6980
原裝現(xiàn)貨,可開13%稅票
 詢價(jià)
更多IRFBF30供應(yīng)商 更新時(shí)間2024-11-16 14:30:00

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