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IRFBC40L

Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.2A)

Description ThirdgenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PakisasurfacemountpowerpackagecapableoftheaccommodatingdiesizesuptoHEX-4.

IRF

International Rectifier

IRFBC40L

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableoftheaccommodatingdiesizesuptoHEX-4.Itprovi

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC40L

iscN-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFBC40L

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC40LC

HEXFET-R POWER MOSFET

HEXFETPowerMOSFET(Vdss=600V/Rds(on)=1.2ohm/Id=6.2A)

IRF

International Rectifier

IRFBC40LC

Power MOSFET

PowerMOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalPowerMOSFETs.UtilizingthenewLCDMOStechnology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedriverequirements

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC40LCPBF

Power MOSFET

PowerMOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalPowerMOSFETs.UtilizingthenewLCDMOStechnology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedriverequirements

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC40LPBF

HEXFET? Power MOSFET

Description ThirdgenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PakisasurfacemountpowerpackagecapableoftheaccommodatingdiesizesuptoHEX-4.

IRF

International Rectifier

IRFBC40LPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableoftheaccommodatingdiesizesuptoHEX-4.Itprovi

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC40LC

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC40LC_V01

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC40LCPBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC40LPBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    IRFBC40L

  • 功能描述：

    MOSFET N-Chan 600V 6.2 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
24+
TO-262
501154
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價
IR
24+
TO-262
710
詢價
IR
2015+
TO-262
12500
全新原裝,現(xiàn)貨庫存長期供應(yīng)
 詢價
IR
23+
TO-262
35890
詢價
IR
23+
TO263
4500
專業(yè)優(yōu)勢供應(yīng)
 詢價
IR
16+
原廠封裝
404
原裝現(xiàn)貨假一罰十
 詢價
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價
IR
24+
TO-262
16800
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
 詢價
IR
21+
TO220
19000
只做正品原裝現(xiàn)貨
 詢價
VISHAY
1503+
TO-262
3000
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價
更多IRFBC40L供應(yīng)商 更新時間2025-1-3 16:40:00

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