零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRFBC40A | Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A) SMPSMOSFET Benefits ●LowGateChargeQgresultsinSimple DriveRequirement ●ImprovedGate,AvalancheandDynamic dv/dtRuggedness ●FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent ●EffectiveCossSpecified(SeeAN1001) Applications ●SwitchModePowerSu | IRF International Rectifier | IRF | |
IRFBC40A | Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
IRFBC40A | iscN-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
IRFBC40A | Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | |
HEXFET Power MOSFET Benefits ●LowGateChargeQgresultsinSimple DriveRequirement ●ImprovedGate,AvalancheandDynamic dv/dtRuggedness ●FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent ●EffectiveCossSpecified(SeeAN1001) Applications ●SwitchModePowerSupply(SMPS) | IRF International Rectifier | IRF | ||
Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A) SMPSMOSFET Benefits ●LowGateChargeQgresultsinSimple DriveRequirement ●ImprovedGate,Avalancheanddynamic dv/dtRuggedness ●FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent ●EffectiveCossSpecified(SeeAN1001) Applications ●SwitchModePowerSu | IRF International Rectifier | IRF | ||
Power MOSFET FEATURES ?LowgatechargeQgresultsinsimpledrive ??requirement ?Improvedgate,avalancheanddynamicdV/dt ??ruggedness ?Fullycharacterizedcapacitanceandavalanche ??voltageandcurrent ?EffectiveCossspecified ?Materialcategorization:fordefinitionsofcompliance ??ple | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Power MOSFET FEATURES ?LowgatechargeQgresultsinsimpledrive requirement ?Improvedgate,avalancheanddynamicdV/dt ruggedness ?Fullycharacterizedcapacitanceandavalanche voltageandcurrent ?EffectiveCossspecified ?Materialcategorization:fordefinitionsofcompliance pleaseseewww. | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Power MOSFET FEATURES ?LowgatechargeQgresultsinsimpledrive requirement ?Improvedgate,avalancheanddynamicdV/dt ruggedness ?Fullycharacterizedcapacitanceandavalanche voltageandcurrent ?EffectiveCossspecified ?Materialcategorization:fordefinitionsofcompliance pleaseseewww. | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Power MOSFET FEATURES ?LowgatechargeQgresultsinsimpledrive ??requirement ?Improvedgate,avalancheanddynamicdV/dt ??ruggedness ?Fullycharacterizedcapacitanceandavalanche ??voltageandcurrent ?EffectiveCossspecified ?Materialcategorization:fordefinitionsofcompliance ??ple | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Power MOSFET FEATURES ?LowgatechargeQgresultsinsimpledrive ??requirement ?Improvedgate,avalancheanddynamicdV/dt ??ruggedness ?Fullycharacterizedcapacitanceandavalanche ??voltageandcurrent ?EffectiveCossspecified ?Materialcategorization:fordefinitionsofcompliance ??ple | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Power MOSFET FEATURES ?LowgatechargeQgresultsinsimpledrive ??requirement ?Improvedgate,avalancheanddynamicdV/dt ??ruggedness ?Fullycharacterizedcapacitanceandavalanche ??voltageandcurrent ?EffectiveCossspecified ?Materialcategorization:fordefinitionsofcompliance ??ple | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Power MOSFET FEATURES ?LowgatechargeQgresultsinsimpledrive ??requirement ?Improvedgate,avalancheanddynamicdV/dt ??ruggedness ?Fullycharacterizedcapacitanceandavalanche ??voltageandcurrent ?EffectiveCossspecified ?Materialcategorization:fordefinitionsofcompliance ??ple | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Power MOSFET FEATURES ?LowgatechargeQgresultsinsimpledrive ??requirement ?Improvedgate,avalancheanddynamicdV/dt ??ruggedness ?Fullycharacterizedcapacitanceandavalanche ??voltageandcurrent ?EffectiveCossspecified ?Materialcategorization:fordefinitionsofcompliance ??ple | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscN-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
HEXFET POWER MOSFET | IRF International Rectifier | IRF | ||
Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
詳細(xì)參數(shù)
- 型號:
IRFBC40A
- 功能描述:
MOSFET N-Chan 600V 6.2 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
19+ |
TO220 |
11000 |
詢價 | |||
IR |
24+ |
TO-220 |
2700 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
IR |
24+ |
TO 220 |
161193 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
INTERNATIONA |
05+ |
原廠原裝 |
4816 |
只做全新原裝真實現(xiàn)貨供應(yīng) |
詢價 | ||
IR |
23+ |
TO-220 |
19526 |
詢價 | |||
IR |
2015+ |
TO-220AB |
12500 |
全新原裝,現(xiàn)貨庫存長期供應(yīng) |
詢價 | ||
IR |
24+ |
TO-220AB |
8866 |
詢價 | |||
IR |
23+ |
TO-220 |
6680 |
全新原裝優(yōu)勢 |
詢價 | ||
IR |
2020+ |
TO-220 |
3600 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 |
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