首頁 >IRFBC40A>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

IRFBC40A

Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A)

SMPSMOSFET Benefits ●LowGateChargeQgresultsinSimple DriveRequirement ●ImprovedGate,AvalancheandDynamic dv/dtRuggedness ●FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent ●EffectiveCossSpecified(SeeAN1001) Applications ●SwitchModePowerSu

IRF

International Rectifier

IRFBC40A

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC40A

iscN-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFBC40A

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC40APBF

HEXFET Power MOSFET

Benefits ●LowGateChargeQgresultsinSimple DriveRequirement ●ImprovedGate,AvalancheandDynamic dv/dtRuggedness ●FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent ●EffectiveCossSpecified(SeeAN1001) Applications ●SwitchModePowerSupply(SMPS)

IRF

International Rectifier

IRFBC40AS

Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A)

SMPSMOSFET Benefits ●LowGateChargeQgresultsinSimple DriveRequirement ●ImprovedGate,Avalancheanddynamic dv/dtRuggedness ●FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent ●EffectiveCossSpecified(SeeAN1001) Applications ●SwitchModePowerSu

IRF

International Rectifier

IRFBC40AS

Power MOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive ??requirement ?Improvedgate,avalancheanddynamicdV/dt ??ruggedness ?Fullycharacterizedcapacitanceandavalanche ??voltageandcurrent ?EffectiveCossspecified ?Materialcategorization:fordefinitionsofcompliance ??ple

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC40AS

Power MOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive requirement ?Improvedgate,avalancheanddynamicdV/dt ruggedness ?Fullycharacterizedcapacitanceandavalanche voltageandcurrent ?EffectiveCossspecified ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC40AS_V01

Power MOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive requirement ?Improvedgate,avalancheanddynamicdV/dt ruggedness ?Fullycharacterizedcapacitanceandavalanche voltageandcurrent ?EffectiveCossspecified ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC40ASPBF

Power MOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive ??requirement ?Improvedgate,avalancheanddynamicdV/dt ??ruggedness ?Fullycharacterizedcapacitanceandavalanche ??voltageandcurrent ?EffectiveCossspecified ?Materialcategorization:fordefinitionsofcompliance ??ple

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC40ASTRL

Power MOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive ??requirement ?Improvedgate,avalancheanddynamicdV/dt ??ruggedness ?Fullycharacterizedcapacitanceandavalanche ??voltageandcurrent ?EffectiveCossspecified ?Materialcategorization:fordefinitionsofcompliance ??ple

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC40ASTRLPBF

Power MOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive ??requirement ?Improvedgate,avalancheanddynamicdV/dt ??ruggedness ?Fullycharacterizedcapacitanceandavalanche ??voltageandcurrent ?EffectiveCossspecified ?Materialcategorization:fordefinitionsofcompliance ??ple

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC40ASTRR

Power MOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive ??requirement ?Improvedgate,avalancheanddynamicdV/dt ??ruggedness ?Fullycharacterizedcapacitanceandavalanche ??voltageandcurrent ?EffectiveCossspecified ?Materialcategorization:fordefinitionsofcompliance ??ple

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC40ASTRRPBF

Power MOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive ??requirement ?Improvedgate,avalancheanddynamicdV/dt ??ruggedness ?Fullycharacterizedcapacitanceandavalanche ??voltageandcurrent ?EffectiveCossspecified ?Materialcategorization:fordefinitionsofcompliance ??ple

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC40A_V01

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC40APBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC40AS

iscN-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFBC40ASPBF

HEXFET POWER MOSFET

IRF

International Rectifier

IRFBC40ASPBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFBC40ASTRLPBFA

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號:

    IRFBC40A

  • 功能描述:

    MOSFET N-Chan 600V 6.2 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
19+
TO220
11000
詢價
IR
24+
TO-220
2700
只做原廠渠道 可追溯貨源
詢價
IR
24+
TO 220
161193
明嘉萊只做原裝正品現(xiàn)貨
詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
詢價
INTERNATIONA
05+
原廠原裝
4816
只做全新原裝真實現(xiàn)貨供應(yīng)
詢價
IR
23+
TO-220
19526
詢價
IR
2015+
TO-220AB
12500
全新原裝,現(xiàn)貨庫存長期供應(yīng)
詢價
IR
24+
TO-220AB
8866
詢價
IR
23+
TO-220
6680
全新原裝優(yōu)勢
詢價
IR
2020+
TO-220
3600
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
更多IRFBC40A供應(yīng)商 更新時間2025-1-15 16:04:00