首頁(yè) >IRFB3207ZGPBF>規(guī)格書列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRFB3207ZGPBF | HEXFETPower MOSFET Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching ●HardSwitchedandHighFrequencyCircuits Benefits ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●En | IRF International Rectifier | IRF | |
HEXFETPowerMOSFET Applications HighEfficiencySynchronousRectificationinSMPS UninterruptiblePowerSupply HighSpeedPowerSwitching HardSwitchedandHighFrequencyCircuits Benefits ImprovedGate,AvalancheandDynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheSOA | IRF International Rectifier | IRF | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
HEXFETPowerMOSFET Applications HighEfficiencySynchronousRectificationinSMPS UninterruptiblePowerSupply HighSpeedPowerSwitching HardSwitchedandHighFrequencyCircuits Benefits WorldwideBestRDS(on)inTO-220 ImprovedGate,AvalancheandDynamicdV/dtRuggedness FullyCharacterizedCapacitancea | IRF International Rectifier | IRF | ||
HEXFET?PowerMOSFET Applications HighEfficiencySynchronousRectificationinSMPS UninterruptiblePowerSupply HighSpeedPowerSwitching HardSwitchedandHighFrequencyCircuits Benefits ImprovedGate,AvalancheandDynamicdV/dtRuggedness FullyCharacterizedCapacitanceandAvalancheSOA | IRF International Rectifier | IRF | ||
HighEfficiencySynchronousRectificationinSMPS | IRF International Rectifier | IRF | ||
HighEfficiencySynchronousRectificationinSMPS | IRF International Rectifier | IRF | ||
HighEfficiencySynchronousRectificationinSMPS | IRF International Rectifier | IRF | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
HighEfficiencySynchronousRectificationinSMPS | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET Applications HighEfficiencySynchronousRectificationinSMPS UninterruptiblePowerSupply HighSpeedPowerSwitching HardSwitchedandHighFrequencyCircuits Benefits ImprovedGate,AvalancheandDynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheSOA | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET Applications HighEfficiencySynchronousRectificationinSMPS UninterruptiblePowerSupply HighSpeedPowerSwitching HardSwitchedandHighFrequencyCircuits Benefits WorldwideBestRDS(on)inTO-220 ImprovedGate,AvalancheandDynamicdV/dtRuggedness FullyCharacterizedCapacitancea | IRF International Rectifier | IRF | ||
HighEfficiencySynchronousRectificationinSMPS | IRF International Rectifier | IRF | ||
HEXFET?PowerMOSFET Applications HighEfficiencySynchronousRectificationinSMPS UninterruptiblePowerSupply HighSpeedPowerSwitching HardSwitchedandHighFrequencyCircuits Benefits ImprovedGate,AvalancheandDynamicdV/dtRuggedness FullyCharacterizedCapacitanceandAvalancheSOA | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET Applications HighEfficiencySynchronousRectificationinSMPS UninterruptiblePowerSupply HighSpeedPowerSwitching HardSwitchedandHighFrequencyCircuits Benefits ImprovedGate,AvalancheandDynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheSOA | IRF International Rectifier | IRF | ||
PELLETDIODES | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON) | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
TRANSISTOR(NPN) FEATURES ?Powerdissipation PCM:1W(Tamb=25℃) ?Collectorcurrent ICM:100mA ?Collector-basevoltage V(BR)CBO:300V ?Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳實(shí)業(yè)深圳市永而佳實(shí)業(yè)有限公司 | WINNERJOIN | ||
TO-92LPlastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●HighVoltage ●SmallCollectorOutputCapacitance | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司 | JIANGSU |
詳細(xì)參數(shù)
- 型號(hào):
IRFB3207ZGPBF
- 功能描述:
MOSFET MOSFT 75V 170A 4.1mOhm 120nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
19+ |
TO-220 |
27930 |
詢價(jià) | |||
IR |
2020+ |
9500 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) | |||
IR |
24+ |
TO-220 |
185 |
只做原廠渠道 可追溯貨源 |
詢價(jià) | ||
Infineon(英飛凌) |
23+ |
TO-220 |
8498 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。 |
詢價(jià) | ||
IR |
17+ |
TO-220 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
Infineon |
18+ |
NA |
3000 |
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)QQ3171516190 |
詢價(jià) | ||
IR |
23+ |
TO-220-3 |
11846 |
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價(jià) | ||
IR原裝 |
22+23+ |
TO-220 |
24123 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
IR |
2020+ |
TO-220 |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
International Rectifier |
2022+ |
1 |
全新原裝 貨期兩周 |
詢價(jià) |
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