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IRFB3206

N-Channel MOSFET Transistor

?DESCRITION ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HardSwitchedandHighFrequencyCircuits ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤3m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lo

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFB3206PBF

HEXFET Power MOSFET

Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching ●HardSwitchedandHighFrequencyCircuits Benefits ●ImprovedGate,AvalancheandDynamicdV/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●En

IRF

International Rectifier

IRFB3206GPBF

HEXFETPower MOSFET

IRF

International Rectifier

IRFP3206

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFP3206PBF

HighEfficiencySynchronousRectificationinSMPS

IRF

International Rectifier

IRFP3206PBF

HEXFETPowerMOSFET

Applications HighEfficiencySynchronousRectificationinSMPS UninterruptiblePowerSupply HighSpeedPowerSwitching HardSwitchedandHighFrequencyCircuits Benefits ImprovedGate,AvalancheandDynamicdV/dtRuggedness FullyCharacterizedCapacitanceandAvalancheSOA

IRF

International Rectifier

IRFS3206

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFS3206PBF

HighEfficiencySynchronousRectificationinSMPS

IRF

International Rectifier

IRFS3206PBF

HEXFETPowerMOSFET

Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching ●HardSwitchedandHighFrequencyCircuits Benefits ●ImprovedGate,AvalancheandDynamicdV/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●En

IRF

International Rectifier

IRFSL3206PBF

HEXFETPowerMOSFET

Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching ●HardSwitchedandHighFrequencyCircuits Benefits ●ImprovedGate,AvalancheandDynamicdV/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●En

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IRFB3206

  • 功能描述：

    MOSFET MOSFT 60V 210A 3mOhm 120nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
23+
TO-220AB
12800
專注原裝正品現(xiàn)貨特價中量大可定
 詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
IR
23+
TO-220
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
IR
21+
TO-220
12588
原裝正品,自己庫存 假一罰十
 詢價
IR
20+
TO-220
38900
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
IR
23+
TO220
3000
原裝正品假一罰百!可開增票!
 詢價
IR
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
IR
21+
TO-220-3
10000
原裝現(xiàn)貨假一罰十
 詢價
IR
2022
TO-220
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
IR
2022+
TO-220AB
12888
原廠代理 終端免費提供樣品
 詢價
更多IRFB3206供應(yīng)商 更新時間2025-3-26 14:00:00

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