IRF9Z34S中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRF9Z34S規(guī)格書詳情
Description
Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9Z34L) is available for low profile applications.
? Advanced Process Technology
? Surface Mount (IRF9Z34S)
? Low-profile through-hole (IRF9Z34L)
? 175°C Operating Temperature
? Fast Switching
? P- Channel
? Fully Avalanche Rated
產(chǎn)品屬性
- 型號：
IRF9Z34S
- 功能描述：
MOSFET P-Chan 60V 18 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
21+ |
TO-263 |
5587 |
原裝現(xiàn)貨庫存 |
詢價 | ||
IR |
23+ |
NA/ |
695 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
IR |
24+ |
TO-263 |
16800 |
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!? |
詢價 | ||
IR |
23+ |
TO-263 |
35890 |
詢價 | |||
IR |
24+ |
TO-263 |
501341 |
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系 |
詢價 | ||
IR |
23+ |
NA |
407 |
專做原裝正品,假一罰百! |
詢價 | ||
IR |
22+23+ |
TO-263 |
27673 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
IR |
20+ |
TO-220 |
36900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
IR |
22+ |
TO-263 |
8000 |
原裝正品支持實單 |
詢價 | ||
Vishay Siliconix |
21+ |
TO2633 D2Pak (2 Leads + Tab) T |
13880 |
公司只售原裝,支持實單 |
詢價 |
