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IRFR9024

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-8.8A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.28Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFR9024N

PowerMOSFET(Vdss=-55V,Rds(on)=0.175ohm,Id=-11A)

IRF

International Rectifier

IRFR9024N

UltraLowOn-Resistance

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9024N

iscP-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFR9024N

P-ChannelMOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

IRFR9024NCPBF

HEXFETPOWERMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFR9024NCPBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9024NCPBF

ULTRALOWON-RESISTANCE

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9024NPBF

HEXFETPOWERMOSFET(VDSS=-55V,RDS(on)=0.175廓,ID=-11A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFR9024NPBF

ULTRALOWON-ORSISTANCE

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

KERSEMI

Kersemi Electronic Co., Ltd.

詳細(xì)參數(shù)

  • 型號：

    IRF9024

  • 制造商：

    INTRSL

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
17+
TO252
9888
只做原裝,現(xiàn)貨庫存
 詢價
IR
23+
TO252
12000
全新原裝假一賠十
 詢價
IR
22+
DPAK
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
TO-252
7300
專注配單,只做原裝進口現(xiàn)貨
 詢價
IR
23+
TO-252
7300
專注配單,只做原裝進口現(xiàn)貨
 詢價
IR
23+
DPAK
7000
詢價
IR
20+
TO-252
7
進口原裝現(xiàn)貨,假一賠十
 詢價
IR
24+
TO-252
3200
只做原裝正品現(xiàn)貨 歡迎來電查詢15919825718
 詢價
IR
23+
D-PAK
19526
詢價
IR
1706+
?
7500
只做原裝進口,假一罰十
 詢價
更多IRF9024供應(yīng)商 更新時間2025-4-26 9:30:00

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