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IRF9230

P-CHANNEL POWER MOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF9230

-5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs

Description ThesedevicesareP-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedfor

Intersil

Intersil Corporation

IRF9230

TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A)

ProductSummary TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorrever

IRF

International Rectifier

IRF9230

P-CHANNEL POWER MOSFET

SEME-LAB

Seme LAB

IRF9230

Avalanche-Energy-Rated P-Channel Power MOSFETs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRFE9230

SimpleDriveRequirements

IRF

International Rectifier

IRFE9230

P-CHANNELPOWERMOSFET

VDSS-200V ID(cont)-3.6A RDS(on)0.825? FEATURES ?SURFACEMOUNT ?SMALLFOOTPRINT ?HERMETICALLYSEALED ?DYNAMICdv/dtRATING ?AVALANCHEENERGYRATING ?SIMPLEDRIVEREQUIREMENTS ?LIGHTWEIGHT

SEME-LAB

Seme LAB

IRFE9230

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18)

BVDSS-200V RDS(on)0.80? ID-4.0A Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignerstheextraflexibilitytheyneedt

IRF

International Rectifier

IRFF9230

P-ChannelMOSFETinaHermeticallysealedTO39

SEME-LAB

Seme LAB

IRFF9230

Avalanche-Energy-RatedP-ChannelPowerMOSFETs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

詳細參數(shù)

  • 型號:

    IRF9230

  • 制造商:

    International Rectifier

  • 功能描述:

    Trans MOSFET P-CH 200V 6.5A 3-Pin(2+Tab) TO-3

  • 功能描述:

    TRANS MOSFET P-CH 200V 6.5A 3PIN TO-204AA - Bulk

  • 制造商:

    Microsemi Corporation

  • 功能描述:

    P CHANNEL MOSFET, TO-3, LAW - Bulk

  • 制造商:

    Rochester Electronics LLC

  • 功能描述:

    HEXFET, HI-REL - Bulk

  • 功能描述:

    P CH MOSFET -200V 6.5A TO-2

  • 功能描述:

    MOSFET P TO-3

  • 功能描述:

    P CH MOSFET, -200V, 6.5A, TO-204AA

  • 功能描述:

    Single P-Channel 200 V 75 W 31 nC Hexfet Transistor Through Hole- TO-204AA

  • 功能描述:

    P CH MOSFET, -200V, 6.5A, TO-204AA; Transistor

  • Polarity:

    P Channel; Continuous Drain Current

  • Id:

    -6.5A; Drain Source Voltage

  • Vds:

    -200V; On Resistance

  • Rds(on):

    800mohm; Rds(on) Test Voltage

  • Vgs:

    -10V; Threshold Voltage Vgs

  • Typ:

    -4V ;RoHS

  • Compliant:

    No

  • 制造商:

    TT Electronics/Semelab

  • 功能描述:

    MOSFET P-Channel 200V 6.5A TO-3

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
0751+
CAN
5
原裝正品 可含稅交易
詢價
Infineon(英飛凌)
23+
TO-204AA(TO-3)
7793
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
詢價
IR
24+
T0-03
66800
原廠授權(quán)一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力!
詢價
IR
24+
TO-3
10000
詢價
IR
N/A
主營模塊
190
原裝正品,現(xiàn)貨供應(yīng)
詢價
IR
2015+
TO-3(鐵帽)
19889
一級代理原裝現(xiàn)貨,特價熱賣!
詢價
IR
23+
TO-3
3000
特價庫存
詢價
IR
16+
NA
8800
原裝現(xiàn)貨,貨真價優(yōu)
詢價
IR
23+
TO-3
5000
原裝正品,假一罰十
詢價
IR
24+
原裝
6980
原裝現(xiàn)貨,可開13%稅票
詢價
更多IRF9230供應(yīng)商 更新時間2025-3-19 14:00:00