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IRF830L

Power MOSFET

FEATURES ?Surfacemount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatashee

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF830LPBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF830PBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRF830PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipatio

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF830PBF

5.0A,500VHeatsinkN-ChannelTypePowerMOSFET

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

IRF830PBF

N-Channel600V(D-S)PowerMOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive requirement ?Improvedgate,avalancheanddynamicdV/dt ruggedness ?Fullycharacterizedcapacitanceandavalanchevoltage andcurrent APPLICATIONS ?Switchmodepowersupply(SMPS) ?Uninterruptiblepowersupply ?Highspee

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

IRF830S

PowerMOSFET(Vdss=500V,Rds(on)=1.5ohm,Id=4.5A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.? ?SurfaceMount ?AvailableinTape&Reel ?DynamicdV/dtRating ?RepetitiveAvalanche

IRF

International Rectifier

IRF830S

N-ChannelMOSFET

■Features ●VDS(V)=500V ●ID=4.5A(VGS=10V) ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

IRF830S

AvailableinTapeandReel

DESCRIPTION TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2PAK(TO-263)issuitableforhighcurrentapplicationsbecause

KERSEMI

Kersemi Electronic Co., Ltd.

IRF830S

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF830S

PowerMOSFET

FEATURES ?Surfacemount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatashee

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF830SPBF

HEXFET?PowerMOSFET

IRF

International Rectifier

IRF830SPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF830STRLPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF830STRRPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFHM830

SmallPowIRMOSFETs

IRF

International Rectifier

IRFHM830D

SmallPowIRMOSFETs

IRF

International Rectifier

IRFHM830DPBF

SynchronousMOSFETforBuckConverters

IRF

International Rectifier

IRFHM830DPBF

CompatiblewithExistingSurfaceMountTechniques

IRF

International Rectifier

IRFHM830DTRPBF

SynchronousMOSFETforBuckConverters

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號：

    IRF830L

  • 功能描述：

    MOSFET N-Chan 500V 4.5 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
VISHAY
1503+
TO-262
3000
就找我吧!--邀您體驗愉快問購元件!
 詢價
IR
23+
TO-262
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
IR
23+
TO-262
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
IR
21+
TO-262
10000
原裝現(xiàn)貨假一罰十
 詢價
Vishay Siliconix
22+
TO2623 Long Leads I2Pak TO262A
9000
原廠渠道,現(xiàn)貨配單
 詢價
IR
2022
TO-262
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
Vishay Siliconix
21+
TO2623 Long Leads I2Pak TO262A
13880
公司只售原裝,支持實單
 詢價
IR
2048+
TO-262
9851
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
IR
TO-262
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
 詢價
Vishay Siliconix
23+
TO2623 Long Leads I2Pak TO262A
9000
原裝正品，支持實單
 詢價
更多IRF830L供應(yīng)商 更新時間2021-9-14 10:50:00

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