首頁 >IRF840SPBF>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
IRF840SPBF | Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheSMD-220isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | |
IRF840SPBF | HEXFET Power MOSFET Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSMD-220isasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.It | IRF International Rectifier | IRF | |
IRF840SPBF | Power MOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheSMD-220isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheSMD-220isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheSMD-220isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET(Vdss=500V,Rds(on)=0.85ohm,Id=8.0A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSMD-220isasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.It | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheSMD-220isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
AdvancedPowerMOSFET FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=500V ?LowerRDS(ON):0.638?(Typ.) | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
500VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan | FairchildFairchild Semiconductor 仙童半導體飛兆/仙童半導體公司 | Fairchild | ||
HEXFETPowerMOSFET(-55V,0.1ohm,-14A) | IRF International Rectifier | IRF | ||
PowerMOSFET(Vdss=500V,Rds(on)=0.85ohm,Id=4.6A) IRF1840G->CorrectPartumberIRFI840G 1.IsolatedPackage 2.HighVoltageIsolation=2.5VKRMS 3.SinktoLeadCreepageDist=4.8mm 4.LowThermalResistance | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?IsolatedPackage ?HighVoltageIsolation=2.5kVRMS(t=60s,f=60Hz) ?Sink | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET(Vdss=500V,Rds(on)=0.85ohm,Id=4.5A) DESCRIPTION ThisnewseriesofLowChargePowerHEXFETsachievesignificantlylowergatechargeoverconventionalHEXFETs.UtilizingadvancedPowerMOSFETtechnology,thedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETtechnology,thedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETtechnology,thedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay |
詳細參數(shù)
- 型號：
IRF840SPBF
- 功能描述：
MOSFET N-Chan 500V 8.0 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
Vishay Siliconix |
24+ |
D2PAK(TO-263) |
30000 |
晶體管-分立半導體產品-原裝正品 |
詢價 | ||
VISHAY |
15+ |
原廠原裝 |
4750 |
進口原裝現(xiàn)貨假一賠十 |
詢價 | ||
VISHAY(威世) |
23+ |
TO-263 |
7828 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價 | ||
VISHAY(威世) |
23+ |
N/A |
23500 |
最新到貨,只做原裝進口 |
詢價 | ||
VISHAY |
14+/15+ |
D2-PAK(TO-263) |
6500 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | ||
DISCRETE |
50 |
SIX |
4750 |
詢價 | |||
IOR |
23+ |
TO263 |
7750 |
全新原裝優(yōu)勢 |
詢價 | ||
IR |
12+ |
TO-263 |
15000 |
全新原裝,絕對正品,公司現(xiàn)貨供應。 |
詢價 | ||
IR |
2020+ |
TO263 |
50 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
IR |
17+ |
TO-263 |
6200 |
詢價 |
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