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IRF830L

PowerMOSFET

FEATURES ?Surfacemount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatashee

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF830LPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF830PBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRF830PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipatio

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF830PBF

5.0A,500VHeatsinkN-ChannelTypePowerMOSFET

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

IRF830PBF

N-Channel600V(D-S)PowerMOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive requirement ?Improvedgate,avalancheanddynamicdV/dt ruggedness ?Fullycharacterizedcapacitanceandavalanchevoltage andcurrent APPLICATIONS ?Switchmodepowersupply(SMPS) ?Uninterruptiblepowersupply ?Highspee

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

IRF830S

PowerMOSFET(Vdss=500V,Rds(on)=1.5ohm,Id=4.5A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.? ?SurfaceMount ?AvailableinTape&Reel ?DynamicdV/dtRating ?RepetitiveAvalanche

IRF

International Rectifier

IRF830S

N-ChannelMOSFET

■Features ●VDS(V)=500V ●ID=4.5A(VGS=10V) ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

IRF830S

AvailableinTapeandReel

DESCRIPTION TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2PAK(TO-263)issuitableforhighcurrentapplicationsbecause

KERSEMI

Kersemi Electronic Co., Ltd.

IRF830S

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    IRF830AL

  • 功能描述：

    MOSFET N-Chan 500V 5.0 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
24+
TO-262
501149
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價(jià)
IR
24+
TO-262
8866
詢價(jià)
IR
23+
TO-262
11007
全新原裝
 詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
IR
24+
TO-262
16800
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!?
 詢價(jià)
IR
23+
TO-262
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
VISHAY
1503+
TO-262
3000
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
 詢價(jià)
IR
23+
TO-262
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
IR
21+
TO-262
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
Vishay Siliconix
22+
TO2623 Long Leads I2Pak TO262A
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
更多IRF830AL供應(yīng)商 更新時(shí)間2025-4-5 17:06:00

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