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IRF820AL

Power MOSFET(Vdss=500V, Rds(on)max=3.0ohm, Id=2.5A)

Applications ?SwitchModePowerSupply(SMPS) ?UninterruptablePowerSupply ?Highspeedpowerswitching Benefits ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalanch

IRF

International Rectifier

IRF820AL

Power MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?EffectiveCossspecified ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF820AL

Power MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalanche VoltageandCurrent ?EffectiveCossspecified ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF820ALPBF

HEXFET Power MOSFET

Applications ?SwitchModePowerSupply(SMPS) ?UninterruptablePowerSupply ?Highspeedpowerswitching ?Lead-Free Benefits ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheV

IRF

International Rectifier

IRF820ALPBF

Power MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?EffectiveCossspecified ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF820APBF

HEXFET Power MOSFET

Applications ?SwitchModePowerSupply(SMPS) ?UninterruptablePowerSupply ?Highspeedpowerswitching ?Lead-Free Benefits ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,Avalancheanddynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheV

IRF

International Rectifier

IRF820APBF

Power MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandcurrent ?EffectiveCossSpecified ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF820AS

Power MOSFET(Vdss=500V, Rds(on)max=3.0ohm, Id=2.5A)

Applications ?SwitchModePowerSupply(SMPS) ?UninterruptablePowerSupply ?Highspeedpowerswitching Benefits ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalanch

IRF

International Rectifier

IRF820AS

Power MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?EffectiveCossspecified ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF820AS

Power MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDrive Requirement ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalanche VoltageandCurrent ?EffectiveCossspecified ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    IRF820

  • 功能描述：

    MOSFET N-Chan 500V 2.5 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
24+
TO-220
8000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
IR
24+
TO-220
198
只做原廠渠道 可追溯貨源
 詢價
IR
24+
TO-220A
9518
絕對原裝現(xiàn)貨,價格低,歡迎詢購!
 詢價
IR
2021+
TO-220
9000
原裝現(xiàn)貨,隨時歡迎詢價
 詢價
IR 墨西哥
14+13+
TO-220
1483
只做原裝正品
 詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
IR
DIP
800
正品原裝--自家現(xiàn)貨-實單可談
 詢價
IR
05+
TO-220
8000
原裝進口
 詢價
IR
23+
TO220
18689
詢價
IR
24+/25+
25
原裝正品現(xiàn)貨庫存價優(yōu)
 詢價
更多IRF820供應(yīng)商 更新時間2025-4-24 22:30:00

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