首頁>IRF7324PBF>規(guī)格書詳情
IRF7324PBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRF7324PBF規(guī)格書詳情
Description
New trench HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications.
● Trench Technology
● Ultra Low On-Resistance
● Dual P-Channel MOSFET
● Low Profile (<1.1mm)
● Available in Tape & Reel
● 2.5V Rated
● Lead-Free
產(chǎn)品屬性
- 型號:
IRF7324PBF
- 功能描述:
MOSFET DUAL -20V P-CH 12 VGS MAX
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
22+ |
SOP-8 |
8000 |
原裝正品支持實單 |
詢價 | ||
INFINEON/英飛凌 |
24+ |
68900 |
一站配齊 原盒原包現(xiàn)貨 朱S Q2355605126 |
詢價 | |||
INFINEON/英飛凌 |
2409+ |
n/a |
100 |
原裝現(xiàn)貨真實庫存!量大特價! |
詢價 | ||
IR |
19+ |
SOP8 |
74629 |
原廠代理渠道,每一顆芯片都可追溯原廠; |
詢價 | ||
IR |
24+ |
DIP |
16500 |
進(jìn)口原裝正品現(xiàn)貨 |
詢價 | ||
IR |
2022+ |
SOP-8 |
30000 |
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十 |
詢價 | ||
INFINEON/英飛凌 |
21+ |
SOP-8 |
3000 |
原裝正品 |
詢價 | ||
Infineon Technologies |
23+ |
原裝 |
7000 |
詢價 | |||
Infineon Technologies |
2022+ |
8-SO |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
INFINEON/英飛凌 |
2447 |
SMD |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 |