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IRF7303PBF

HEXFET Power MOSFET (VDSS = 30V , RDS(on) = 0.050廓 )

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRF7303TR

Generation V Technology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRF7303TR

Marking：IRF7303；Package：SOP-8；Dual N-Channel MOSFET

GenerationVTechnology UltraLowOn-Resistance SurfaceMount Dynamicdv/dtRating FastSwitching Lead-Free VDS(V)=30V ID=5.3A RDS(ON)50m(VGS=-10V) RDS(ON)80m(VGS=-4.5V) Features TheSOP-8hasbeenmodiedthroughacustomizec leadframeforenhancedthermalcharacteristic

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

IRF7303TR

Marking：IRF7303；Package：SOP-8；Dual N-Channel MOSFET

Features GenerationVTechnology UltraLowOn-Resistance SurfaceMount Dynamicdv/dtRating FastSwitching Lead-Free VDS(V)=30V ID=5.3A RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

IRF7303TRPBF

Dual N-Channel 30-V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFET ?100UISTested ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?SetTopBox ?LowCurrentDC/DC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

IRF7303TRPBF-TP

Marking：F7303；Package：SOP-8；Dual N-Channel Enhancement Mode Power MOSFET

GENERALFEATURES @Ros(oN=35mO@VGS=10V ?Ros=45mO@VGS=4.5V ‘@SuperhighdensitycelldesignforextremelylowRos(oN) ?Exceptionalon-resistanceandmaximumDCcurent capability

TECHPUBLICTECH PUBLIC Electronics co LTD

臺(tái)舟電子臺(tái)舟電子股份有限公司

IRF7304

Generation V Technology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF7304

Marking：IRF7304；Package：SOP-8；Dual P-Channel MOSFET

GenerationVTechnology UltraLowOn-Resistance SurfaceMount AvailableinTape&Reel Dynamicdv/dtRating FastSwitching Lead-Free Features VDS(V)=-20V RDS(ON)140m(VGS=-2.7V) RDS(ON)90m(VGS=-4.5V) TheSOP-8hasbeenmodifiedthroughacustomizedleadframeforenhan

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

IRF7304

Dual P-Channel MOSFET

Features GenerationVTechnology UltraLowOn-Resistance SurfaceMount AvailableinTape&Reel Dynamicdv/dtRating FastSwitching Lead-Free VDS(V)=-20V RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

IRF7304PBF

HEXFET Power MOSFET

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    IRF730

  • 功能描述：

    MOSFET N-Chan 400V 5.5 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
13+
TO-220/SOP8
50000
勤思達(dá)科技主營(yíng)IR系列,全新原裝正品,公司現(xiàn)貨供應(yīng)。
 詢價(jià)
IR
TO-220
3200
專業(yè)分銷全系列產(chǎn)品!絕對(duì)原裝正品!量大可訂!價(jià)格優(yōu)
 詢價(jià)
APEC
全新原裝
TO-220(P)
5000
全新原裝 貨期兩周
 詢價(jià)
IR
24+
TO-220
2000
全新原裝深圳倉(cāng)庫(kù)現(xiàn)貨有單必成
 詢價(jià)
IR
24+
TO-220
9600
原裝現(xiàn)貨,優(yōu)勢(shì)供應(yīng),支持實(shí)單!
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IR
15+
TO-220
14
原裝正品 可含稅交易
 詢價(jià)
FSC/仙童
24+
TO-220
9200
絕對(duì)原裝現(xiàn)貨,價(jià)格低,歡迎詢購(gòu)!
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IR 墨西哥
13+
TO-220
97
只做原裝正品
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IR
24+
TO 220
161266
明嘉萊只做原裝正品現(xiàn)貨
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IR
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
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更多IRF730供應(yīng)商 更新時(shí)間2025-4-11 11:04:00

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