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首頁 >IRF640STRL>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IRF640STRL	文件：2.11507 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF640STRLPBF	文件：2.11507 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF640STRLPBFA	文件：237.05 Kbytes Page：10 Pages	Power MOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF640STRR	文件：2.11507 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF640STRRPBF	文件：2.11507 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF640STRRPBFA	文件：237.05 Kbytes Page：10 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF640T	文件：247.31 Kbytes Page：12 Pages	N-channel200V-0.15廓-15A-TO-220MESHOVERLAY??PowerMOSFET Description ThisPowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources Generalfeatures ■Extremelyhighdv/dtcapability ■Gatechargeminimize	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
IRFF640	文件：1.13916 Mbytes Page：5 Pages	N-ChannelMOSFETusesadvancedtrenchtechnology	DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導(dǎo)體有限公司	DOINGTER
IRFI640	文件：703.84 Kbytes Page：9 Pages	200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRFI640B	文件：703.84 Kbytes Page：9 Pages	200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRFI640G	文件：1.80136 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFI640G	文件：172.81 Kbytes Page：6 Pages	PowerMOSFET(Vdss=200V,Rds(on)=0.18ohm,Id=9.8A) DESCRIPTION ThirdgenerationPowerMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-in	IRF International Rectifier	IRF
IRFI640G	文件：4.31856 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFI640G	文件：1.81084 Mbytes Page：8 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFI640G	文件：966.65 Kbytes Page：10 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFI640G	文件：322.94 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=9.8A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconvert	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRFI640GPBF	文件：1.33877 Mbytes Page：8 Pages	powermosfet DESCRIPTION ThirdgenerationPowerMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-in	IRF International Rectifier	IRF
IRFI640GPBF	文件：1.80136 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFI640GPBF	文件：4.31856 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFI640GPBF	文件：966.65 Kbytes Page：10 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay

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詳細(xì)參數(shù)

型號：
IRF640STRL
功能描述：
MOSFET N-Chan 200V 18 Amp
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價(jià)格
深圳市坤融電子科技有限公司	IRF640STRL	IR	24+	TO-263	14	只做原廠渠道可追溯貨源	詢價(jià)
深圳市一線半導(dǎo)體有限公司	IRF640STRL	IR	24+	TO-263	36800		詢價(jià)
深圳市星佑電子有限公司	IRF640STRL	INTERNATIONA	05+	原廠原裝	11112	只做全新原裝真實(shí)現(xiàn)貨供應(yīng)	詢價(jià)
深圳市博浩通科技有限公司	IRF640STRL	IR	23+	TO-263	9500	專業(yè)優(yōu)勢供應(yīng)	詢價(jià)
深圳市恒創(chuàng)達(dá)實(shí)業(yè)有限公司	IRF640STRL	IR	17+	TO-263	6200		詢價(jià)
深圳市華斯頓科技有限公司	IRF640STRL	IR	22+23+	TO-263	14625	絕對原裝正品全新進(jìn)口深圳現(xiàn)貨	詢價(jià)
深圳市創(chuàng)芯聯(lián)盈電子有限公司	IRF640STRL	IR	1910+	TO-263	47500	IR專營!正規(guī)代理,錯(cuò)過是損失!	詢價(jià)
深圳市拓億芯電子有限公司	IRF640STRL	IR	23+	TO-263	30000	全新原裝現(xiàn)貨,價(jià)格優(yōu)勢	詢價(jià)
深圳市科雨電子有限公司	IRF640STRL	VISHAY	1503+	TO-263	3000	就找我吧!--邀您體驗(yàn)愉快問購元件!	詢價(jià)
深圳市萊克訊科技有限公司	IRF640STRL	IR	1923+	TO-263	6896	原裝進(jìn)口現(xiàn)貨庫存專業(yè)工廠研究所配單供貨	詢價(jià)

更多IRF640STRL供應(yīng)商更新時(shí)間2024-10-26 16:36:00

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