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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
IRF634B	文件：859.54 Kbytes Page：10 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRF634B	文件：135.5 Kbytes Page：6 Pages	POWERMOSFET	SUNTAC Suntac Electronic Corp.	SUNTAC
IRF634B	文件：896.45 Kbytes Page：9 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRF634B	文件：281.1 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRF634FP	文件：333.68 Kbytes Page：9 Pages	N-CHANNEL250V-0.38ohm-8ATO-220/TO-220FPMESHOVERLAY??MOSFET Description UsingthelatesthighvoltageMESHOVERLAY?process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformance.ThenewpatentedSTriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,makesitsuitableincovertersforli	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
IRF634FP	文件：326.43 Kbytes Page：14 Pages	N-channel250V-0.38廓-8ATO-220/TO-220FPMeshOverlay??PowerMOSFET	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán)	STMICROELECTRONICS
IRF634N	文件：162.91 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF634N	文件：301.06 Kbytes Page：11 Pages	PowerMOSFET(Vdss=250V,Rds(on)=0.435ohm,Id=8.0A) Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn	IRF International Rectifier	IRF
IRF634NL	文件：301.06 Kbytes Page：11 Pages	PowerMOSFET(Vdss=250V,Rds(on)=0.435ohm,Id=8.0A) Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn	IRF International Rectifier	IRF
IRF634NL	文件：162.91 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF634NLPBF	文件：222.71 Kbytes Page：11 Pages	HEXFETPowerMOSFET Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn	IRF International Rectifier	IRF
IRF634NLPBF	文件：162.91 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF634NPBF	文件：222.71 Kbytes Page：11 Pages	HEXFETPowerMOSFET Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn	IRF International Rectifier	IRF
IRF634NPBF	文件：162.91 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF634NS	文件：301.06 Kbytes Page：11 Pages	PowerMOSFET(Vdss=250V,Rds(on)=0.435ohm,Id=8.0A) Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn	IRF International Rectifier	IRF
IRF634NS	文件：162.91 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF634NSPBF	文件：222.71 Kbytes Page：11 Pages	HEXFETPowerMOSFET Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn	IRF International Rectifier	IRF
IRF634NSPBF	文件：162.91 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF634NSTRL	文件：162.91 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF634NSTRLPBF	文件：162.91 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
貿(mào)澤芯城（深圳）電子科技有限公司	IRF634A-TSTU	FAIRCHILD/仙童	23+		10000	原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種	詢價(jià)
深圳市明嘉萊科技有限公司	IRF634A-TSTU	FAIRCHILD/仙童	01+	NA	880000	明嘉萊只做原裝正品現(xiàn)貨	詢價(jià)
深圳市星佑電子有限公司	IRF634AZTSTU	FAIRCHILD	05+	原廠原裝	4447	只做全新原裝真實(shí)現(xiàn)貨供應(yīng)	詢價(jià)
瀚佳科技(深圳)有限公司	IRF634AZTSTU	FAIRCHILD	24+		35200	一級(jí)代理/放心采購(gòu)	詢價(jià)
深圳市安羅世紀(jì)電子有限公司	IRF634AZTSTU	FAIRCHILD	2023+	SMD	5093	安羅世紀(jì)電子只做原裝正品貨	詢價(jià)
深圳市科芯源微電子有限公司	IRF634A功率三極管	IR	24+	TO220	58000	全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)!	詢價(jià)
深圳市安富世紀(jì)電子有限公司	IRF634A其他被動(dòng)元件	FAIRCHILD/仙童	23+	TO-220	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳市一線半導(dǎo)體有限公司	IRF634B	FAIRCHILD	24+	TO-220	30000		詢價(jià)
深圳市昌和盛利電子有限公司	IRF634B	FAIRCHILD	23+	TO-220	9526		詢價(jià)
深圳市科恒偉業(yè)電子有限公司	IRF634B	FAIRCHILD	2016+	TO-220	6528	房間原裝進(jìn)口現(xiàn)貨假一賠十	詢價(jià)

更多IRF634A-TSTU供應(yīng)商更新時(shí)間2025-1-5 11:10:00

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