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IRF2N60-220中文資料SUNTAC數(shù)據(jù)手冊(cè)PDF規(guī)格書

IRF2N60-220
廠商型號(hào)

IRF2N60-220

功能描述

POWER MOSFET

文件大小

88.55 Kbytes

頁面數(shù)量

3

生產(chǎn)廠商 Suntac Electronic Corp.
企業(yè)簡(jiǎn)稱

SUNTAC

中文名稱

Suntac Electronic Corp.

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二

更新時(shí)間

2025-1-9 18:56:00

IRF2N60-220規(guī)格書詳情

GENERAL DESCRIPTION

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage

transients.

FEATURES

Robust High Voltage Termination

Avalanche Energy Specified

Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

Diode is Characterized for Use in Bridge Circuits

IDSS and VDS(on) Specified at Elevated Temperature

產(chǎn)品屬性

  • 型號(hào):

    IRF2N60-220

  • 制造商:

    SUNTAC

  • 制造商全稱:

    SUNTAC

  • 功能描述:

    POWER MOSFET

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