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IRF1902TRPBF中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書
IRF1902TRPBF規(guī)格書詳情
Description
These N-Channel HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications..
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering technique.
■ Ultra Low On-Resistance
■ N-Channel MOSFET
■ Surface Mount
■ Available in Tape & Reel
■ Lead-Free
產(chǎn)品屬性
- 型號(hào)：
IRF1902TRPBF
- 功能描述：
MOSFET MOSFT 20V 4.2A 85mOhm 5nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
NA/ |
3045 |
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價(jià) | ||
IRF |
2020+ |
SOP-8 |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
IR |
20+ |
SOP-8 |
2960 |
誠(chéng)信交易大量庫存現(xiàn)貨 |
詢價(jià) | ||
IR |
22+ |
SOP-8 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價(jià) | ||
IR |
22+ |
SOP-8 |
354000 |
詢價(jià) | |||
IOR |
24+ |
SOP8 |
35400 |
全新原裝現(xiàn)貨/假一罰百! |
詢價(jià) | ||
IR |
24+ |
SOP-8 |
500553 |
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系 |
詢價(jià) | ||
IR |
20+ |
SOP-8 |
63258 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票 |
詢價(jià) | ||
IR |
22+ |
SOP-8 |
8000 |
原裝正品支持實(shí)單 |
詢價(jià) | ||
Infineon Technologies |
21+ |
8SOIC |
13880 |
公司只售原裝,支持實(shí)單 |
詢價(jià) |
