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LH1503AB

2FormASolid-StateRelay

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

LM1503

N-ChannelEnhancementModePowerMOSFET

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

LMS1503

N-Channel30V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?PowerMOSFET ?LowOn-Resistance ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?DC/DCConverters,HighSpeedSwitching

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

LT1503G

1.5AGLASSPASSIVATEDRECTIFIER

Features GlassPassivatedDieConstruction DiffusedJunction HighCurrentCapabilityandLowForwardVoltageDrop SurgeOverloadRatingto50APeak LowReverseLeakageCurrent PlasticMaterial-ULFlammabilityClassification94V-0

DIODES

Diodes Incorporated

LTR-C1503

IREmitterandDetector

LITEONLite-On Technology Corporation

光寶科技光寶科技股份有限公司

MB1503

LOW-POWERPLLFREQUENCYSYNTHESIZERWITHPOWERSAVEFUNCTION(1.1GHz)

LOW-POWERPLLFREQUENCYSYNTHESIZERWITHPOWERSAVEFUNCTION(1.1GHz) TheFujitsuMB1503isaserialinputphase-lockedloop(PLL)frequencysynthesizerwithapulse-swallowfunction.Astand-bymodeisprovidedtolimitpowerconsumptionduringintermittentoperation. TheMB1503isconfiguredo

FujitsuFujitsu Component Limited.

富士通富士通株式會社

MDD1503

SingleN-channelTrenchMOSFET30V,87.5A,4.7m(ohm)

MGCHIP

MagnaChip Semiconductor.

MDD1503RH

SingleN-channelTrenchMOSFET30V,87.5A,4.7m(ohm)

MGCHIP

MagnaChip Semiconductor.

MM1503

VideoSwitch?75??driver?Y/Cmix

Outline ThisICextendstheseriesofICsforvideo/audiosignalswitching,witha2-input1-outputsinglevideoswitch,videosignal/chromasignal75?driver,andY/Cmixingcircuitinonesmallpackage(SOT-26). Features (1)Lowpowerconsumptionachieved. (2)Lowpowersupplyvolt

MITSUMIMitsumi Electronics, Corp.

三美三美電機(jī)株式會社

MMBD1503

HighConductanceLowLeakageDiode350mW

Features ●LowLeakage ●SurfaceMountPackageIdeallySuitedforAutomaticInsertion ●150°CJunctionTemperature ●HighConductance

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號：

    IRF1503PBF

  • 功能描述：

    MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

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IR
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IR
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International Rectifier
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IR
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65230
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Infineon
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493
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INF
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INFINEON
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