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IRF

Inductors Epoxy Conformal Coated Uniform Roll Coated

FEATURES ?Flame-retardantcoatingandcolorbandidentification ?Uniformcoatingisexcellentforautomaticinsertion ?Availableinbulk,ammoandreelpackperEIARS/296 ?SuperiorelectricalspecificationshighQandselfresonantfrequency,lowDCresistance,highratedDCcurrent TEST

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF01ER100K

Inductors Epoxy Conformal Coated Uniform Roll Coated

FEATURES ?Flame-retardantcoatingandcolorbandidentification ?Uniformcoatingisexcellentforautomaticinsertion ?Availableinbulk,ammoandreelpackperEIARS/296 ?SuperiorelectricalspecificationshighQandselfresonantfrequency,lowDCresistance,highratedDCcurrent TEST

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF034

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)

TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd

IRF

International Rectifier

IRF044

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)

ProductSummary TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorrever

IRF

International Rectifier

IRF044

Simple Drive Requirements

DESCRIPTION ?DrainCurrentID=44A@TC=25℃ ?DrainSourceVoltage- :VDSS=60V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.028Ω(Max) ?SimpleDriveRequirements APPLICATIONS ?Switchingpowersupplies ?Motorcontrols,InvertersandChoppers ?Audioamplifiersandhighen

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF054

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)

60V,N-CHANNEL TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superior

IRF

International Rectifier

IRF064N

Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A??

FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,providesthedesigne

IRF

International Rectifier

IRF-1

Inductors Epoxy Conformal Coated Uniform Roll Coated

FEATURES ?Flame-retardantcoatingandcolorbandidentification ?Uniformcoatingisexcellentforautomaticinsertion ?Availableinbulk,ammoandreelpackperEIARS/296 ?SuperiorelectricalspecificationshighQandselfresonantfrequency,lowDCresistance,highratedDCcurrent TEST

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF100B201

100 V N-Channel MOSFET

Benefits ImprovedGate,AvalancheandDynamicdV/dtRuggedness FullyCharacterizedCapacitanceandAvalancheSOA EnhancedbodydiodedV/dtanddI/dtCapability Lead-Free,RoHSCompliant,Halogen-Free VDS=100V ID=192A RDS(ON)(atVGS=10V)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司

IRF100P218

N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=209A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.28mΩ(Max)@VGS=10V DESCRIPTION ·DC-DCConverters ·MotorDrive ·PowerSwitch

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF101

N-Channel Power MOSFETs, 27 A, 60-100V

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF1010E

Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

?AdvancedProcessTechnology ?UltraLowOn-Resistance ?Dynamicdv/dtRating ?175°COperatingTemperature ?FastSwitching ?FullyAvalancheRated Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveex

IRF

International Rectifier

IRF1010EL

Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A??

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRF1010ELPBF

HEXFET Power MOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRF1010EPBF

HEXFET? Power MOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRF1010ES

Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A??

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRF1010ESPBF

HEXFET Power MOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRF1010EZ

AUTOMOTIVE MOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF1010EZ

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF1010EZL

AUTOMOTIVE MOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號：

    IRF

  • 制造商：

    VISHAY

  • 制造商全稱：

    Vishay Siliconix

  • 功能描述：

    Inductors Epoxy Conformal Coated Uniform Roll Coated

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
22+
263
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價
IR
23+
263
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
IR
23+
263
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
IR
23+
263
7000
詢價
IOR
05+
SOP8
860
原裝現(xiàn)貨海量庫存歡迎咨詢
 詢價
2023+
10
詢價
Infineon
21+
DNA
283
公司現(xiàn)貨,有掛就有貨。
 詢價
SAMSUNG
24+
TO-220
2987
只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電!
 詢價
INFINEON
SOP-8
22+/23+
10000
原裝正品 價格優(yōu)勢
 詢價
20+
36800
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
更多IRF供應(yīng)商 更新時間2024-12-28 14:00:00

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