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IRF

Inductors Epoxy Conformal Coated Uniform Roll Coated

FEATURES ?Flame-retardantcoatingandcolorbandidentification ?Uniformcoatingisexcellentforautomaticinsertion ?Availableinbulk,ammoandreelpackperEIARS/296 ?SuperiorelectricalspecificationshighQandselfresonantfrequency,lowDCresistance,highratedDCcurrent TEST

VishayVishay Siliconix

威世科技威世科技半導體

IRF01ER100K

Inductors Epoxy Conformal Coated Uniform Roll Coated

FEATURES ?Flame-retardantcoatingandcolorbandidentification ?Uniformcoatingisexcellentforautomaticinsertion ?Availableinbulk,ammoandreelpackperEIARS/296 ?SuperiorelectricalspecificationshighQandselfresonantfrequency,lowDCresistance,highratedDCcurrent TEST

VishayVishay Siliconix

威世科技威世科技半導體

IRF034

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)

TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyandd

IRF

International Rectifier

IRF044

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)

ProductSummary TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorrever

IRF

International Rectifier

IRF044

Simple Drive Requirements

DESCRIPTION ?DrainCurrentID=44A@TC=25℃ ?DrainSourceVoltage- :VDSS=60V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.028Ω(Max) ?SimpleDriveRequirements APPLICATIONS ?Switchingpowersupplies ?Motorcontrols,InvertersandChoppers ?Audioamplifiersandhighen

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF054

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)

60V,N-CHANNEL TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superior

IRF

International Rectifier

IRF064N

Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A??

FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,providesthedesigne

IRF

International Rectifier

IRF-1

Inductors Epoxy Conformal Coated Uniform Roll Coated

FEATURES ?Flame-retardantcoatingandcolorbandidentification ?Uniformcoatingisexcellentforautomaticinsertion ?Availableinbulk,ammoandreelpackperEIARS/296 ?SuperiorelectricalspecificationshighQandselfresonantfrequency,lowDCresistance,highratedDCcurrent TEST

VishayVishay Siliconix

威世科技威世科技半導體

IRF100B201

100 V N-Channel MOSFET

Benefits ImprovedGate,AvalancheandDynamicdV/dtRuggedness FullyCharacterizedCapacitanceandAvalancheSOA EnhancedbodydiodedV/dtanddI/dtCapability Lead-Free,RoHSCompliant,Halogen-Free VDS=100V ID=192A RDS(ON)(atVGS=10V)

UMWUMW Rightway Semiconductor Co., Ltd.

友臺半導體廣東友臺半導體有限公司(簡稱UMW?)

IRF100P218

N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=209A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.28mΩ(Max)@VGS=10V DESCRIPTION ·DC-DCConverters ·MotorDrive ·PowerSwitch

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF101

N-Channel Power MOSFETs, 27 A, 60-100V

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF1010E

Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

?AdvancedProcessTechnology ?UltraLowOn-Resistance ?Dynamicdv/dtRating ?175°COperatingTemperature ?FastSwitching ?FullyAvalancheRated Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveex

IRF

International Rectifier

IRF1010EL

Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A??

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRF1010ELPBF

HEXFET Power MOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRF1010EPBF

HEXFET? Power MOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRF1010ES

Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A??

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRF1010ESPBF

HEXFET Power MOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRF1010EZ

AUTOMOTIVE MOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

IRF1010EZ

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF1010EZL

AUTOMOTIVE MOSFET

Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi

IRF

International Rectifier

詳細參數(shù)

  • 型號:

    IRF

  • 制造商:

    VISHAY

  • 制造商全稱:

    Vishay Siliconix

  • 功能描述:

    Inductors Epoxy Conformal Coated Uniform Roll Coated

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
22+
263
6000
終端可免費供樣,支持BOM配單
詢價
IR
23+
263
8000
專注配單,只做原裝進口現(xiàn)貨
詢價
IR
23+
263
8000
專注配單,只做原裝進口現(xiàn)貨
詢價
IR
23+
263
7000
詢價
IR
24+
TO-252
30000
原裝正品現(xiàn)貨 價格優(yōu)惠
詢價
IR
23+
ZIP11
3000
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售
詢價
Infineon
20+
4000
原裝正品現(xiàn)貨
詢價
INFINEON
22+
SOP-8
4000
進口原裝公司現(xiàn)貨熱賣
詢價
Infineon/英飛凌
D2PAK
6000
詢價
ST/意法半導體
21+
TO-220-3
8080
只做原裝,質(zhì)量保證
詢價
更多IRF供應(yīng)商 更新時間2024-10-26 10:00:00