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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
IRF044	文件：48.34 Kbytes Page：2 Pages	SimpleDriveRequirements DESCRIPTION ?DrainCurrentID=44A@TC=25℃ ?DrainSourceVoltage- :VDSS=60V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.028Ω(Max) ?SimpleDriveRequirements APPLICATIONS ?Switchingpowersupplies ?Motorcontrols,InvertersandChoppers ?Audioamplifiersandhighen	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRF044	文件：147.69 Kbytes Page：7 Pages	RepetitiveAvalancheRatings	IRF International Rectifier	IRF
IRF044	文件：146.64 Kbytes Page：7 Pages	REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSTHRU-HOLE(TO-204AA/AE) ProductSummary TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorrever	IRF International Rectifier	IRF
IRF044	文件：21.98 Kbytes Page：2 Pages	N-CHANNELPOWERMOSFET	SEME-LAB Seme LAB	SEME-LAB
IRF044SMD	文件：21.39 Kbytes Page：2 Pages	N-CHANNELPOWERMOSFET	SEME-LAB Seme LAB	SEME-LAB
IRFM044	文件：189.51 Kbytes Page：7 Pages	60V,N-CHANNEL	IRF International Rectifier	IRF
IRFM044	文件：192.77 Kbytes Page：7 Pages	SimpleDriveRequirements	IRF International Rectifier	IRF
IRFMJ044	文件：245.33 Kbytes Page：7 Pages	SimpleDriveRequirements	IRF International Rectifier	IRF
IRFMJ044	文件：239.98 Kbytes Page：7 Pages	POWERMOSFETSURFACEMOUNT(D3PAK)	IRF International Rectifier	IRF
IRFN044	文件：137.5 Kbytes Page：7 Pages	SimpleDriveRequirements	IRF International Rectifier	IRF
IRFN044	文件：211.52 Kbytes Page：6 Pages	POWERMOSFETN-CHANNEL(BVdss=60V,Rds(on)=0.040ohm,Id=44A) RDS(on)0.04? ID44A HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-established	IRF International Rectifier	IRF
IRFN044SMD	文件：22.51 Kbytes Page：2 Pages	N-CHANNELPOWERMOSFET	SEME-LAB Seme LAB	SEME-LAB
IRFP044	文件：1.996 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelsprecludet	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFP044	文件：170.96 Kbytes Page：6 Pages	PowerMOSFET(Vdss=60V,Rds(on)=0.028ohm,Id=57A) Description ThirdGenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevels	IRF International Rectifier	IRF
IRFP044N	文件：105.25 Kbytes Page：8 Pages	PowerMOSFET(Vdss=55V,Rds(on)=0.020ohm,Id=53A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide	IRF International Rectifier	IRF
IRFP044N	文件：335.02 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor ?DESCRITION ?UltraLowOn-resistance ?FastSwitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤20m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRFP044NPBF	文件：1.54744 Mbytes Page：9 Pages	AdvancedProcessTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide	IRF International Rectifier	IRF
IRFP044NPBF	文件：1.54744 Mbytes Page：9 Pages	ADVANCEDPROCESSTECHNOLOGY	IRF International Rectifier	IRF
IRFP044PBF	文件：1.76262 Mbytes Page：8 Pages	HEXFETPowerMOSFET	IRF International Rectifier	IRF
IRFP044PBF	文件：1.996 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelsprecludet	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay

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型號(hào)：
IRCC044
功能描述：
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | CHIP

供應(yīng)商	型號(hào)	品牌	批號(hào)	庫(kù)存	備注	價(jià)格
深圳市河鋒鑫科技有限公司	IRCC044	IR	22+	6000	終端可免費(fèi)供樣,支持BOM配單	詢價(jià)
深圳市創(chuàng)新跡電子有限公司	IRCC044	IR	23+	8000	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價(jià)
深圳市安富世紀(jì)電子有限公司	IRCC044	IR	23+	8000	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價(jià)
天津市博通航睿技術(shù)有限公司	IRCC044	IR	23+	7000		詢價(jià)

更多IRCC044供應(yīng)商更新時(shí)間2025-1-18 14:00:00

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