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IRFD024

PowerMOSFET(Vdss=60V,Rds(on)=0.10ohm,Id=2.5A)

IRF

International Rectifier

IRFD024

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD024

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD024

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?ForAutomaticinsertion ?Endstackable ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdge

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD024PBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRFD024PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD024PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFD024PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFE024

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFE024

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET??RANSISTORSSURFACEMOUNT(LCC-18)

Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignerstheextraflexibilitytheyneedtoincreasecircuitboarddensity.InternationalRe

IRF

International Rectifier

IRFE024

SimpleDriveRequirements

IRF

International Rectifier

IRFF024

60V,N-CHANNEL

TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. TheHEXFETtransistorsalsof

IRF

International Rectifier

IRFF024

N-ChannelMOSFETinaHermeticallysealedTO39

SEME-LAB

Seme LAB

IRFL024

PowerMOSFET(Vdss=55V,Rds(on)=0.075ohm,Id=2.8A)

VDSS=55V RDS(on)=0.075? ID=2.8A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth

IRF

International Rectifier

IRFL024N

PowerMOSFET(Vdss=55V,Rds(on)=0.075ohm,Id=2.8A)

VDSS=55V RDS(on)=0.075? ID=2.8A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth

IRF

International Rectifier

IRFL024N

AdvancedProcessTechnology

IRF

International Rectifier

IRFL024N

SurfaceMount

IRF

International Rectifier

IRFL024NPBF

HEXFET?PowerMOSFET

VDSS=55V RDS(on)=57.5m? ID=5.1A Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

IRFL024NPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRFL024NTR

SurfaceMount

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號:

    IRCC024

  • 功能描述:

    TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | CHIP

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
22+
6000
終端可免費供樣,支持BOM配單
詢價
IR
23+
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價
IR
23+
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價
IR
23+
7000
詢價
更多IRCC024供應(yīng)商 更新時間2025-1-18 14:00:00