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首頁 >IRC634PRF>規(guī)格書列表

零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IRC634PRF	文件：1.17673 Mbytes Page：9 Pages	HEXFET Power MOSFET	IRF International Rectifier	IRF
IRF634	文件：171.6 Kbytes Page：6 Pages	PowerMOSFET(Vdss=250V,Rds(on)=0.45ohm,Id=8.1A) Description ThirdInternationalRectifierfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?FastSwitching ?EaseofParalleli	IRF International Rectifier	IRF
IRF634	文件：333.68 Kbytes Page：9 Pages	N-CHANNEL250V-0.38ohm-8ATO-220/TO-220FPMESHOVERLAY??MOSFET Description UsingthelatesthighvoltageMESHOVERLAY?process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformance.ThenewpatentedSTriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,makesitsuitableincovertersforli	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
IRF634	文件：224.02 Kbytes Page：7 Pages	AdvancedPowerMOSFET FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=250V ?LowerRDS(ON):0.327?(Typ.)	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRF634	文件：1.54151 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF634	文件：128.43 Kbytes Page：1 Pages	N-channelmosfettransistor Features ?WithTO-220package ?Simpledriverequirements ?Fastswitching ?VDSS=250V;RDS(ON)≤0.45Ω;ID=8.1A ?1.gate2.drain3.source	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRF634	文件：326.43 Kbytes Page：14 Pages	N-channel250V-0.38廓-8ATO-220/TO-220FPMeshOverlay??PowerMOSFET	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
IRF634	文件：71.61 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor DESCRIPTION ?DrainCurrent-ID=8.1A@TC=25°C ?DrainSourceVoltage- :VDSS=250V(Min) ?StaticDrain-SourceOn-Resistance :RDS(OD=0.45Ω(Max) ?FastSwitchingSpeed ?LowDriveRequirement APPLICATIONS ?Highcurrent,highspeedswitching ?Switchmodepowersupplies ?DC-DCconv	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司	NJSEMI
IRF634	文件：2.43533 Mbytes Page：31 Pages	SEMICONDUCTORS	etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商	etc2
IRF634	文件：157.84 Kbytes Page：8 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF-634	文件：326.43 Kbytes Page：14 Pages	N-channel250V-0.38廓-8ATO-220/TO-220FPMeshOverlay??PowerMOSFET	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS
IRF634A	文件：224.02 Kbytes Page：7 Pages	AdvancedPowerMOSFET FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=250V ?LowerRDS(ON):0.327?(Typ.)	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRF634A	文件：353.28 Kbytes Page：6 Pages	AdvancedPowerMOSFET	ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED.	ARTSCHIP
IRF634A	文件：2.43533 Mbytes Page：31 Pages	SEMICONDUCTORS	etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商	etc2
IRF634A	文件：281.1 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRF634B	文件：859.54 Kbytes Page：10 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRF634B	文件：135.5 Kbytes Page：6 Pages	POWERMOSFET	SUNTAC Suntac Electronic Corp.	SUNTAC
IRF634B	文件：896.45 Kbytes Page：9 Pages	250VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRF634B	文件：281.1 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRF634FP	文件：333.68 Kbytes Page：9 Pages	N-CHANNEL250V-0.38ohm-8ATO-220/TO-220FPMESHOVERLAY??MOSFET Description UsingthelatesthighvoltageMESHOVERLAY?process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformance.ThenewpatentedSTriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,makesitsuitableincovertersforli	STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)	STMICROELECTRONICS

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市永貝爾科技有限公司	IRC634PRF	IRF	23+	NA	19960	只做進(jìn)口原裝,終端工廠免費(fèi)送樣	詢價(jià)
深圳市力通偉業(yè)半導(dǎo)體有限公司	IRC640	IR	13+	TO-220-5P	1000	特價(jià)熱銷現(xiàn)貨庫存	詢價(jià)
深圳市科恒偉業(yè)電子有限公司	IRC640	IR	2016+	TO220	5562	只做進(jìn)口原裝現(xiàn)貨!或訂貨!假一賠十!	詢價(jià)
深圳市星佑電子有限公司	IRC640	INTERNATIONA	05+	原廠原裝	13448	只做全新原裝真實(shí)現(xiàn)貨供應(yīng)	詢價(jià)
深圳市弘為電子有限公司	IRC640	IR	16+	原廠封裝	2000	原裝現(xiàn)貨假一罰十	詢價(jià)
深圳市博浩通科技有限公司	IRC640	IR	23+	TO-2205-Pin(	8600	全新原裝現(xiàn)貨	詢價(jià)
深圳市歐立現(xiàn)代科技有限公司	IRC640	ir	24+	N/A	6980	原裝現(xiàn)貨,可開13%稅票	詢價(jià)
深圳市華來深電子有限公司	IRC640	IR	23+	TO-220-5	11846	一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十	詢價(jià)
深圳市振宏微科技有限公司	IRC640	IR	23+	原廠封裝	9888	專做原裝正品,假一罰百!	詢價(jià)
深圳市華斯頓科技有限公司	IRC640	IR	22+23+	TO220	14066	絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨	詢價(jià)

更多IRC634PRF供應(yīng)商更新時(shí)間2024-10-28 9:03:00

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