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首頁 >IR110ND>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IRFD110	文件：174.72 Kbytes Page：6 Pages	PowerMOSFET(Vdss=100V,Rds(on)=0.54ohm,Id=1.0A)	IRF International Rectifier	IRF
IRFD110	文件：132.41 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFD110	文件：52.55 Kbytes Page：6 Pages	1A,100V,0.600Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching	Intersil Intersil Corporation	Intersil
IRFD110	文件：156.17 Kbytes Page：9 Pages	PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?175°COperatingTemperature ?Fastswitchingandeaseofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Third	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFD110PBF	文件：1.78348 Mbytes Page：8 Pages	HEXFETPowerMOSFET	IRF International Rectifier	IRF
IRFD110PBF	文件：132.41 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. The4pinDIPpackageisalowcostmachine-insertablecasestylewhichcanbestackedinmultiplecombinat	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFD110PBF	文件：156.17 Kbytes Page：9 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFE110	文件：199.53 Kbytes Page：7 Pages	HEXFETTRANSISTORSSURFACEMOUNT(LCC-18) REPETITIVEAVALANCHEANDdv/dtRATED HEXFET?TRANSISTORS SURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesigners	IRF International Rectifier	IRF
IRFE110	文件：203 Kbytes Page：7 Pages	SimpleDriveRequirements	IRF International Rectifier	IRF
IRFE110	文件：70.03 Kbytes Page：1 Pages	MultipleSmall-SignalTransistors	MotorolaMotorola, Inc 摩托羅拉加爾文制造公司	Motorola
IRFF110	文件：328.66 Kbytes Page：7 Pages	3.5A,100V,0.600Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching	Intersil Intersil Corporation	Intersil
IRFF110	文件：176.97 Kbytes Page：5 Pages	PowerMOSField-EffectTransistors N-ChannelEnhancement-ModePowerField-EffectTransistors Features ?SOAisPowerDissipationLimited ?NanosecondSwitchingSpeeds ?LinearTransferCharacteristics ?HighInputImpedance ?Majoritycarrierdevice	GESS GE Solid State	GESS
IRFF110	文件：16.64 Kbytes Page：1 Pages	N-ChannelMOSFETinaHermeticallysealedTO39	SEME-LAB Seme LAB	SEME-LAB
IRFF110	文件：474.27 Kbytes Page：2 Pages	IM-CHANIMELPOWERMOSFETsTO-39PACKAGE TheHEXFETtransistorsalsofeatureallofthewellestablishedadvantagesofMOSFETssuchasvoltagecontrol,freedomfromsecondbreakdown,veryfastswitching,easeofparalleling,andtemperaturestabilityoftheelectricalparameters. TheyarewellsuitedforapplicationssuchasswitchingD	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司	NJSEMI
IRFG110	文件：221.22 Kbytes Page：7 Pages	POWERMOSFETTHRU-HOLE(MO-036AB)	IRF International Rectifier	IRF
IRFG110	文件：26.09 Kbytes Page：2 Pages	14LEADDUALINLINEQUAD	SEME-LAB Seme LAB	SEME-LAB
IRFG110	文件：273.04 Kbytes Page：7 Pages	SimpleDriveRequirements	IRF International Rectifier	IRF
IRFG110	文件：273.04 Kbytes Page：7 Pages	POWERMOSFETTHRU-HOLE(MO-036AB)	IRF International Rectifier	IRF
IRFL110	文件：244.59 Kbytes Page：8 Pages	PowerMOSFET(Vdss=100V,Rds(on)=0.54ohm,Id=1.5A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderin	IRF International Rectifier	IRF
IRFL110	文件：1.45555 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?SurfaceMount ?AvailableinTapeandReel ?DynamicdV/dtRating ?Repetitive	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay

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型號：
IR110ND
制造商：
APEM
功能描述：
Std rear mount decade thumbwheel switch

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市一線半導(dǎo)體有限公司	IR1110	IOR	24+	QFP-64P	37890		詢價
深圳市福安甌科技有限公司	IR1110	IR	22+	QFP64L	1100	強調(diào)現(xiàn)貨,隨時查詢!	詢價
深圳市弘為電子有限公司	IR1110	IR	16+	QFP64L	1068	原裝現(xiàn)貨假一罰十	詢價
深圳市永貝爾科技有限公司	IR1110	IRF	23+	NA	19960	只做進口原裝,終端工廠免費送樣	詢價
深圳市科恒偉業(yè)電子有限公司	IR1110	IOR	1922+	QFP	6852	只做原裝正品現(xiàn)貨!或訂貨假一賠十!	詢價
深圳市英卓爾科技有限公司	IR1110	IR	20+	QFP	500	樣品可出,優(yōu)勢庫存歡迎實單	詢價
深圳市萊克訊科技有限公司	IR1110	IR	1923+	QFP64L	3000	絕對進口原裝現(xiàn)貨	詢價
深圳市芯誠實創(chuàng)科技有限公司	IR1110	IOR	2022	QFP-64	37890	全新原裝現(xiàn)貨熱賣	詢價
深圳廊盛科技有限公司	IR1110	IR	22+	QFP64L	50000	只做原裝正品,假一罰十,歡迎咨詢	詢價
深圳市賽美科科技有限公司	IR1110	IR		QFP64L	68500	一級代理原裝正品假一罰十價格優(yōu)勢長期供貨	詢價

更多IR110ND供應(yīng)商更新時間2024-12-30 16:30:00

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